CAJ | 학술논문

采用俄歇电子能谱法（A ES ），对某芯片的正常引线键合点和失效引线键合点进行了分析。实验结果表明：失效引线键合点表面出现了Cl元素，其失效原因是在键合点处形成的氯化物腐蚀键合点，导致键合点失效；溅射20 min后，键合点内发生Ni金属的迁移，这也是导致键合点失效的原因之一。
채용아헐전자능보법（A ES ），대모심편적정상인선건합점화실효인선건합점진행료분석。실험결과표명：실효인선건합점표면출현료Cl원소，기실효원인시재건합점처형성적록화물부식건합점，도치건합점실효；천사20 min후，건합점내발생Ni금속적천이，저야시도치건합점실효적원인지일。
The bonding points of both normal wire and failed wire of the chip were analyzed by Auger elec-tron spectroscopy .The results showed that the element of the chlorine was found in the surface of the bonding point of failed wire ,resulting in corrosion occured and chloride formed at the bonding point .The another possible reason of the failure was migration of Ni atom after 20 min of sputtering at the bonding point .