红外与激光工程
紅外與激光工程
홍외여격광공정
INFRARED AND LASER ENGINEERING
2014年
8期
2546-2551
,共6页
微光读出%量子效应器件%高灵敏度%增益可调读出电路%暗电流
微光讀齣%量子效應器件%高靈敏度%增益可調讀齣電路%暗電流
미광독출%양자효응기건%고령민도%증익가조독출전로%암전류
weak-light readout%quantum effect photo-detector%high sensitivity%gain adjustable readout circuit%dark current
针对暗电流低、灵敏度高等优点的新原理量子效应光电探测器，设计和加工了增益可调 CTIA读出电路，以获得宽动态范围读出。读出电路芯片与1×64元量子效应光电探测器集成封装，在室温(300K)条件下进行读出测试研究。光源采用633nmHe-Ne 激光器，直径50μm 光斑聚焦照射。测试结果表明：器件偏压为-0.1V，激光功率150pW，积分时间78μs，响应电压55mV,电压响应率达到3.67E+08V/W。根据测试结果，提出了进一步降低暗电流影响的改进测试方案。
針對暗電流低、靈敏度高等優點的新原理量子效應光電探測器，設計和加工瞭增益可調 CTIA讀齣電路，以穫得寬動態範圍讀齣。讀齣電路芯片與1×64元量子效應光電探測器集成封裝，在室溫(300K)條件下進行讀齣測試研究。光源採用633nmHe-Ne 激光器，直徑50μm 光斑聚焦照射。測試結果錶明：器件偏壓為-0.1V，激光功率150pW，積分時間78μs，響應電壓55mV,電壓響應率達到3.67E+08V/W。根據測試結果，提齣瞭進一步降低暗電流影響的改進測試方案。
침대암전류저、령민도고등우점적신원리양자효응광전탐측기，설계화가공료증익가조 CTIA독출전로，이획득관동태범위독출。독출전로심편여1×64원양자효응광전탐측기집성봉장，재실온(300K)조건하진행독출측시연구。광원채용633nmHe-Ne 격광기，직경50μm 광반취초조사。측시결과표명：기건편압위-0.1V，격광공솔150pW，적분시간78μs，향응전압55mV,전압향응솔체도3.67E+08V/W。근거측시결과，제출료진일보강저암전류영향적개진측시방안。
For new quantum effects photo -detector array which has small dark current and high sensitivity, a gain adjustable readout circuit based on CTIA structure and sampling and holding circuit with correlated double sampling (CDS) technique was designed and fabricated in order to obtain a application of wide dynamic range. The 633 nm laser beam with radiation intensity tunable which is calibrated by a power meter shoots on the photo-detector cell one by one with a 50 m diameter facula. The test results show that the readout response voltage can reach to 55 mV and responsivity 3.67E+08V/W when biased voltage up to -3 V and radiation intensity 150 pW at 300 K and integration time 78 μs. The test system is improved to reduce dark current further.
