CAJ | 학술논문

采用熔融的氢氧化钠刻蚀在蓝宝石衬底上生长的铝镓氮外延层，用深紫外光致发光光谱仪测量铝镓氮的荧光光谱来控制铝镓氮层的刻蚀深度，用盐酸将含铝氢氧化钠中和并调节至酸性(pH1~2)后转移至250 mL的容量瓶内定容，用铬天青S络合显色，用分光光度计在546 nm处测定吸光度来确定铝的浓度。该法测量结果的相对标准偏差为1.1%（n=5），加铝标准溶液做回收试验，回收率为96％～103%。该法可用于铝镓氮外延片中铝含量的准确测量。
채용용융적경양화납각식재람보석츤저상생장적려가담외연층，용심자외광치발광광보의측량려가담적형광광보래공제려가담층적각식심도，용염산장함려경양화납중화병조절지산성(pH1~2)후전이지250 mL적용량병내정용，용락천청S락합현색，용분광광도계재546 nm처측정흡광도래학정려적농도。해법측량결과적상대표준편차위1.1%（n=5），가려표준용액주회수시험，회수솔위96％～103%。해법가용우려가담외연편중려함량적준학측량。
AlxGa1-xN sapphire wafer was etched by melton sodium hydroxide, aluminium in which was determined by spectrophotometry. The etched depth of etched AlxGa1-xN film was controlled by deep UV photoluminescence spectrometer. Sodium hydroixide with ecthed aluminium was neutralized by hydrochloric acid and transfered into 250 mL volumetric flask after solution pH was adjusted to the range of 1-2. The aluminium in solution complexed with chrome azurol S formed into purple complex compound. The aluminium content was determined at 546 nm by spectrophotometer. The relative standard deviation was 1.1%(n=5). The added recovery was 96%-103%. The method is suitable for precise measurement of aluminium in the AlxGa1-xN epitaxal wafer.