电子学报
電子學報
전자학보
ACTA ELECTRONICA SINICA
2013年
7期
1431-1435
,共5页
胡佳俊%陈后鹏%宋志棠%王倩%宏潇%李喜%许伟义
鬍佳俊%陳後鵬%宋誌棠%王倩%宏瀟%李喜%許偉義
호가준%진후붕%송지당%왕천%굉소%리희%허위의
瞬态响应%相位裕度%快速响应%低压差%大电流负载
瞬態響應%相位裕度%快速響應%低壓差%大電流負載
순태향응%상위유도%쾌속향응%저압차%대전류부재
transient response%phase margin%quick response%low dropout%large loading current
本文分析了传统大电流负载的LDO (Low-dropout Regulator )系统实现系统稳定性和瞬态响应提高的局限性,在此基础上,提出了一种片内集成的瞬态响应提高技术.此技术无需外挂电容和等效串联电阻(Equivalent Series Resistor ,ESR),即能使系统在全负载范围内保持稳定性和良好的纹波抑制能力.仿真结果表明,系统空载时,静态电流为64μA ,且最大能提供800mA的负载电流,1KHz时的电源抑制比达到-60dB ,当负载电流以800mA/5μs跳变时,最大下冲电压为400mV ,上冲电压为536mV ,恢复时间分别只需6.7μs和12.8μs ,版图面积约为0.64mm2.
本文分析瞭傳統大電流負載的LDO (Low-dropout Regulator )繫統實現繫統穩定性和瞬態響應提高的跼限性,在此基礎上,提齣瞭一種片內集成的瞬態響應提高技術.此技術無需外掛電容和等效串聯電阻(Equivalent Series Resistor ,ESR),即能使繫統在全負載範圍內保持穩定性和良好的紋波抑製能力.倣真結果錶明,繫統空載時,靜態電流為64μA ,且最大能提供800mA的負載電流,1KHz時的電源抑製比達到-60dB ,噹負載電流以800mA/5μs跳變時,最大下遲電壓為400mV ,上遲電壓為536mV ,恢複時間分彆隻需6.7μs和12.8μs ,版圖麵積約為0.64mm2.
본문분석료전통대전류부재적LDO (Low-dropout Regulator )계통실현계통은정성화순태향응제고적국한성,재차기출상,제출료일충편내집성적순태향응제고기술.차기술무수외괘전용화등효천련전조(Equivalent Series Resistor ,ESR),즉능사계통재전부재범위내보지은정성화량호적문파억제능력.방진결과표명,계통공재시,정태전류위64μA ,차최대능제공800mA적부재전류,1KHz시적전원억제비체도-60dB ,당부재전류이800mA/5μs도변시,최대하충전압위400mV ,상충전압위536mV ,회복시간분별지수6.7μs화12.8μs ,판도면적약위0.64mm2.
This paper analyzes the stability and transient response enhancement limit of traditional LDO system and a tran-sient response enhancement technique of on-chip LDO system is presented .Based on the analysis ,a transient response enhancement technique fully integrated on-chip is put forward .The proposed scheme not only results in stability within a wide range of load varia-tion ,but also gets a good ripple rejection without off-chip capacitor and equivalent series resistor .It is demonstrated by simulation that the proposed circuit dissipates only 64μA of quiescent current with empty load and it is capable of delivering load current up to 800mA ,the power supply rejection rate at 1KHz is about -60dB .For a load step of 800mA/5μs ,the circuit has a maximum under-shoot of 400mV and a maximum overshoot of 536mV .The recovery time is only 6.7μs and 12.8μs respectively and the layout area is about 0.64mm2 .