天津大学学报
天津大學學報
천진대학학보
JOURNAL OF TIANJIN UNIVERSITY SCIENCE AND TECHNOLOGY
2014年
3期
243-248
,共6页
姚素英%徐文静%高静%聂凯明%徐江涛
姚素英%徐文靜%高靜%聶凱明%徐江濤
요소영%서문정%고정%섭개명%서강도
CMOS图像传感器%列级ADC%单斜ADC%逐次逼近ADC
CMOS圖像傳感器%列級ADC%單斜ADC%逐次逼近ADC
CMOS도상전감기%렬급ADC%단사ADC%축차핍근ADC
CMOS image sensor%column-parallel ADC%single-slope ADC%successive-approximation ADC
提出了一种适用于高速小尺寸像素的列级ADC,该ADC采用单斜ADC(single-slope ADC,SS ADC)与逐次逼近ADC(successive-approximation ADC,SA ADC)相结合的方式在提高模数转换速度的同时减小了芯片面积. SS ADC实现5位粗量化,SA ADC实现5位细量化,SA ADC中5位分段电容DAC的桥接电容采用单位电容并利用区间交叠方式实现了误差校正.采用GSMC 0.18,μm 1P4M标准CMOS工艺对电路进行设计,仿真结果表明:所提出的列级ADC在167,kHz/s采样率和3.3,V电源电压下,有效位数9.81,每列功耗0.132,mW,速度比传统SS ADC提高了22倍.
提齣瞭一種適用于高速小呎吋像素的列級ADC,該ADC採用單斜ADC(single-slope ADC,SS ADC)與逐次逼近ADC(successive-approximation ADC,SA ADC)相結閤的方式在提高模數轉換速度的同時減小瞭芯片麵積. SS ADC實現5位粗量化,SA ADC實現5位細量化,SA ADC中5位分段電容DAC的橋接電容採用單位電容併利用區間交疊方式實現瞭誤差校正.採用GSMC 0.18,μm 1P4M標準CMOS工藝對電路進行設計,倣真結果錶明:所提齣的列級ADC在167,kHz/s採樣率和3.3,V電源電壓下,有效位數9.81,每列功耗0.132,mW,速度比傳統SS ADC提高瞭22倍.
제출료일충괄용우고속소척촌상소적렬급ADC,해ADC채용단사ADC(single-slope ADC,SS ADC)여축차핍근ADC(successive-approximation ADC,SA ADC)상결합적방식재제고모수전환속도적동시감소료심편면적. SS ADC실현5위조양화,SA ADC실현5위세양화,SA ADC중5위분단전용DAC적교접전용채용단위전용병이용구간교첩방식실현료오차교정.채용GSMC 0.18,μm 1P4M표준CMOS공예대전로진행설계,방진결과표명:소제출적렬급ADC재167,kHz/s채양솔화3.3,V전원전압하,유효위수9.81,매렬공모0.132,mW,속도비전통SS ADC제고료22배.
A column-parallel ADC for high speed and small pixel size CMOS image sensor is proposed. The proposed ADC not only improves speed but also decreases chip area by combining single-slope ADC(SS ADC)with successive-approximation ADC(SA ADC). SS ADC converts the upper five bits,and SA ADC converts the lower five bits. The coupling capacitor of 5-bit segmented capacitive DAC in SA ADC is a unit capacitor. In addition,error correction is realized by interval overlap. The proposed ADC,which is designed in 0.18,μm 1P4M standard CMOS process, shows an effective bit number of 9.81 at 167,kHz/s. It dissipates 0.132,mW with a 3.3,V power supply. The speed is 22,times faster than that of the conventional SS ADC.