电荷自旋注入机制分离的新型稀磁半导体*
전하자선주입궤제분리적신형희자반도체*
New types of diluted magnetic semiconductors with decoupled charge and spin doping
  • 万方数据
    物理 물리

    2013年 10期 682-688 ,共7页

    邓正%赵侃%靳常青

    산정%조간%근상청

    稀磁半导体%电荷自旋注入分离 稀磁半導體%電荷自鏇註入分離
    희자반도체%전하자선주입분리
    diluted magnetic semiconductor%decoupled charge and spin doping
    兼具电荷属性和自旋特性的稀磁半导体将有可能突破Moore定律的瓶颈。文章介绍了作者实验室近年来发现和研究的电荷自旋注入机制分离的新型稀磁半导体，目前这类新型稀磁半导体的铁磁转变温度可以与(Ga, Mn)As相比拟，并有望进一步实现室温铁磁。
    겸구전하속성화자선특성적희자반도체장유가능돌파Moore정률적병경。문장개소료작자실험실근년래발현화연구적전하자선주입궤제분리적신형희자반도체，목전저류신형희자반도체적철자전변온도가이여(Ga, Mn)As상비의，병유망진일보실현실온철자。
    Diluted magnetic semiconductors (DMSs) that combine both charge and spin quantum freedom are promising for developing new generation information technologies. We report our recent work on new types of DMSs with decoupled charge and spin doping. Their highest Curie temperature in the bulk form is comparable to that of typical (Ga, Mn)As, making room-temperature ferromagnetism within reach.
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