CAJ | 학술논문

Trench VDMOS的制造流程中，要进行多晶的淀积、回蚀、清洗，其效果的好坏会直接影响到器件的电学参数，诸如Vth、Igss等。在淀积工艺中，要重点控制沉积速率、炉管清洁周期，防止产生沟槽内多晶膜层出现缝隙以及沟槽外多晶层出现凸起。在回蚀工序，要重点控制刻蚀反应物，防止造成多晶残留。清洗工序，通过选择不含水分的溶剂，避免大量水痕缺陷的产生。
Trench VDMOS적제조류정중，요진행다정적정적、회식、청세，기효과적호배회직접영향도기건적전학삼수，제여Vth、Igss등。재정적공예중，요중점공제침적속솔、로관청길주기，방지산생구조내다정막층출현봉극이급구조외다정층출현철기。재회식공서，요중점공제각식반응물，방지조성다정잔류。청세공서，통과선택불함수분적용제，피면대량수흔결함적산생。
Poly depositing, etching back and cleaning are very important in the manufacturing process of trench VDMOS, these processes will impact on the electric parameter of device, such asVth,Igss etc. The gap in the poly can be avoided by way of controlling the poly deposition rate and furnace cleaning frequency. By the way of controlling the polymer in the etching back process, the poly residue can be removed, and by using a kind of solvent without water in the cleaning process, the defect such as water mark can be avoided.