陕西理工学院学报(自然科学版)
陝西理工學院學報(自然科學版)
협서리공학원학보(자연과학판)
JOURNAL OF SHAANXI UNIVERSITY OF TECHNOLOGY (NATURAL SCIENCE EDITION)
2014年
2期
70-73,78
,共5页
GaN%量子点%光学性质
GaN%量子點%光學性質
GaN%양자점%광학성질
GaN%quantum dot%optical property
由于GaN基量子点具有较强的量子效应,有望获得比其他量子阱器件更优异的性能。目前GaN基量子点的制备及其光学特性已经成为Ⅲ-Ⅴ族半导体器件研究的热点。探讨了GaN基量子点的生长及其结构特性,重点研究了GaN基量子点的S-K生长模式及其影响量子点生长的因素,并讨论了GaN基量子点的光致发光特性及其影响因素。
由于GaN基量子點具有較彊的量子效應,有望穫得比其他量子阱器件更優異的性能。目前GaN基量子點的製備及其光學特性已經成為Ⅲ-Ⅴ族半導體器件研究的熱點。探討瞭GaN基量子點的生長及其結構特性,重點研究瞭GaN基量子點的S-K生長模式及其影響量子點生長的因素,併討論瞭GaN基量子點的光緻髮光特性及其影響因素。
유우GaN기양자점구유교강적양자효응,유망획득비기타양자정기건경우이적성능。목전GaN기양자점적제비급기광학특성이경성위Ⅲ-Ⅴ족반도체기건연구적열점。탐토료GaN기양자점적생장급기결구특성,중점연구료GaN기양자점적S-K생장모식급기영향양자점생장적인소,병토론료GaN기양자점적광치발광특성급기영향인소。
Due to quantum effects in quantum dots ,GaN-based quantum dot optoelectronic devices are expected to obtain more excellent performance than the quantum well devices .The preparations and optical properties of GaN-based quantum dots remains a hot issue .This paper mainly discusses the growth of GaN-based quantum dots and their structural characteristics , focusing on the S-K growth patterns of GaN-based quantum dot and their impact factors ,and also discusses the photoluminescence properties and applications of GaN-based quantum dot .