漳州师范学院学报（自然科学版）
漳州師範學院學報（自然科學版）
장주사범학원학보（자연과학판）
JOURNAL OF ZHANGZHOU TEACHERS COLLEGE(NATURAL SCIENCE EDITION)
2013年
3期
66-70
,共5页
峰值波长偏移%GaN基%热效应%极化场%屏蔽效应
峰值波長偏移%GaN基%熱效應%極化場%屏蔽效應
봉치파장편이%GaN기%열효응%겁화장%병폐효응
peak wavelength shift%GaN-based%thermal effect%polarization field%screening effect
在不同环境温度及不同驱动电流条件下,测试GaN基绿光发光二极管峰值波长的变化,结果表明,环境温度及驱动电流的增加，均会引起结温的增加,但是峰值波长的变化却有区别.在环境温度不变，驱动电流增加过程中，出现LED峰值波长的蓝移现象；在驱动电流不变、环境温度变化过程中，出现LED峰值波长的红移.用能带及极化场耦合模理论，分析实验结果，得到In0.25 GaN0.75阱层的极化场强为3.304MV/cm，垒层的极化场强为-0.826MV/cm；首次引入能隙变量随结温变化率的概念，在LED额定驱动电流范围内，热效应、载流子对极化效应引起的内建电场的屏蔽作用所引的能隙变量随结温变化率分别为3.637×10-4ev/k及1.3025×10-3ev/k，研究认为，二种效应引起的能隙变量随结温的变化率决定着峰值波长偏移的方向.
在不同環境溫度及不同驅動電流條件下,測試GaN基綠光髮光二極管峰值波長的變化,結果錶明,環境溫度及驅動電流的增加，均會引起結溫的增加,但是峰值波長的變化卻有區彆.在環境溫度不變，驅動電流增加過程中，齣現LED峰值波長的藍移現象；在驅動電流不變、環境溫度變化過程中，齣現LED峰值波長的紅移.用能帶及極化場耦閤模理論，分析實驗結果，得到In0.25 GaN0.75阱層的極化場彊為3.304MV/cm，壘層的極化場彊為-0.826MV/cm；首次引入能隙變量隨結溫變化率的概唸，在LED額定驅動電流範圍內，熱效應、載流子對極化效應引起的內建電場的屏蔽作用所引的能隙變量隨結溫變化率分彆為3.637×10-4ev/k及1.3025×10-3ev/k，研究認為，二種效應引起的能隙變量隨結溫的變化率決定著峰值波長偏移的方嚮.
재불동배경온도급불동구동전류조건하,측시GaN기록광발광이겁관봉치파장적변화,결과표명,배경온도급구동전류적증가，균회인기결온적증가,단시봉치파장적변화각유구별.재배경온도불변，구동전류증가과정중，출현LED봉치파장적람이현상；재구동전류불변、배경온도변화과정중，출현LED봉치파장적홍이.용능대급겁화장우합모이론，분석실험결과，득도In0.25 GaN0.75정층적겁화장강위3.304MV/cm，루층적겁화장강위-0.826MV/cm；수차인입능극변량수결온변화솔적개념，재LED액정구동전류범위내，열효응、재류자대겁화효응인기적내건전장적병폐작용소인적능극변량수결온변화솔분별위3.637×10-4ev/k급1.3025×10-3ev/k，연구인위，이충효응인기적능극변량수결온적변화솔결정착봉치파장편이적방향.
Wavelength shifts of the GaN-based green light emitting diode (LED) were tested under different environment temperature and driving current. The results showed that when increasing either environment temperature or drive current, the junction temperature of LED will always rise along, while the variation of peak wavelength is different in either case. The peak wavelength of LED will blueshift when environmental temperature is constant and drive current increases. When drive current stay constant and environment temperature increases, the peak wavelength of LED becomes redshifted. The polarization built-in field intensity was estimated using polarization field coupling model theory. The polarization intensity in the well of In0.25GaN0.75 is 3.304 MVcm-1, the polarization field strength of barrier layer is -0.826 MVcm-1. Energy gap variable change rate relevant to junction temperature variation is introduced into analysis for the first time. Within the rated drive current of LED, the energy gap variable change rates relevant to junction temperature variation caused by heat effect and screening effect caused by carriers to the polarization built-in field is 3.637×10-4 evk-1 and 1.3025×10-3 evk-1 respectively. The study indicates that the energy gap change rate relevant to junction temperature variation caused by both effects determines the peak wavelength shifting direction.
