CAJ | 학술논문

利用丝网印刷的方法制备了一种基于氧化锌发射体的三极结构场致发射背光源器件．当栅极电压达到570 V时，阳极场发射电流密度达到0.62 mA/cm2，部分阳极电流的产生是由于在栅极孔洞内侧的氧化镁受到电子激发产生了二次电子发射．在1000 min的测试过程中，平均场发射电流密度和器件亮度分别为0.47 mA/cm2和1250 cd/m2，波动小于10％．有限元模拟计算的结果表明，栅极结构具有良好的电子束聚焦性能．利用SPICE仿真模拟和示波器测量的方法考察了该背光源的驱动性能．稳定的场发射性能、逐行扫描的特性和高响应速度预示了基于该三极结构的场致发射器件在液晶显示器的中具有良好的应用前景．
이용사망인쇄적방법제비료일충기우양화자발사체적삼겁결구장치발사배광원기건．당책겁전압체도570 V시，양겁장발사전류밀도체도0.62 mA/cm2，부분양겁전류적산생시유우재책겁공동내측적양화미수도전자격발산생료이차전자발사．재1000 min적측시과정중，평균장발사전류밀도화기건량도분별위0.47 mA/cm2화1250 cd/m2，파동소우10％．유한원모의계산적결과표명，책겁결구구유량호적전자속취초성능．이용SPICE방진모의화시파기측량적방법고찰료해배광원적구동성능．은정적장발사성능、축행소묘적특성화고향응속도예시료기우해삼겁결구적장치발사기건재액정현시기적중구유량호적응용전경．
A zinc oxide ZnO field emitter-based backlight unit for liquid crystal display with a gated structure is fabricated by screen-printing processes.The measured anode field emission current density reaches 0.62 mA/cm2 when the applied gate voltage is 570 V.Part of the anode current is contributed by the secondary electron emission which is excited from the MgO layer inside the gate apertures on the gate plate. The average emission current density and luminance are 0.47 mA/cm2 and 1 250 cd/m2 respectively with a fluctuation of about 10% during the 1 000 min measurement.By a finite element method calculation the gated structure shows a good electron beam focusing property. The driving performance of the backlight unit is characterized by SPICE simulation tools and measured by the oscilloscope. Stable field emission line-by-line scanning and fast response characteristics of the backlight unit indicate its promising application in the liquid crystal displays.