CAJ | 학술논문

论文提出了0.5μm CMOS工艺圆片级可靠性（WLR）评估的方法，为工艺、电路可靠性提高和及时在线控制开拓了新思路。论文针对0.5μm工艺中金属电迁移以及器件热载流子等失效项，分别给出了相关内容的工艺物理机理、测试结构、测试方法和结果。测试得出单一电迁移失效、热载流子失效寿命可以达到1×109数量级（几十年），初步实现了工艺可靠性的在线监控。
논문제출료0.5μm CMOS공예원편급가고성（WLR）평고적방법，위공예、전로가고성제고화급시재선공제개탁료신사로。논문침대0.5μm공예중금속전천이이급기건열재류자등실효항，분별급출료상관내용적공예물리궤리、측시결구、측시방법화결과。측시득출단일전천이실효、열재류자실효수명가이체도1×109수량급（궤십년），초보실현료공예가고성적재선감공。
This article illustrates the wafer level reliability evaluation method of 0.5 μm CMOS process, gives an innovation thought about process reliability estimation and on line process control. This article discussed some physical mechanisms that caused failure, such as electrical migration of metal, hot carrier etc. Meanwhile, this article give out the related test structure and method. Test results indicate that the lifetime of the single electrical migration of metal or hot carrier is over 1×109 seconds, using this methods, we make the realization of process reliability evaluation monitor.