CAJ | 학술논문

硅基高密度电容器是利用半导体3D深硅槽技术和应用高介电常数（高K）材料制作的电容。相比钽电容和多层陶瓷电容（MLCC），硅基电容具有十年以上的寿命、工作温度范围大、容值温度系数小以及损耗低等优点。文章研究原子层沉积（ALD）制备的Al2O3薄膜的介电特性，通过优化ALD原子沉积温度和退火工艺，发现在沉积温度420℃和O3气氛退火5 min下，ALD生长的Al2O3薄膜击穿强度可大于0.7 V/nm，相对介电常数达8.7。制成的硅基电容器电容密度达到50 nF/mm2，漏电流小于5 nA/mm2。
규기고밀도전용기시이용반도체3D심규조기술화응용고개전상수（고K）재료제작적전용。상비단전용화다층도자전용（MLCC），규기전용구유십년이상적수명、공작온도범위대、용치온도계수소이급손모저등우점。문장연구원자층침적（ALD）제비적Al2O3박막적개전특성，통과우화ALD원자침적온도화퇴화공예，발현재침적온도420℃화O3기분퇴화5 min하，ALD생장적Al2O3박막격천강도가대우0.7 V/nm，상대개전상수체8.7。제성적규기전용기전용밀도체도50 nF/mm2，루전류소우5 nA/mm2。
Silicon high density capacitor is a capacitor made with semiconductor silicon 3D deep trench technology and high dielectric constant(high K)material. Compared with tantalum capacitor and multi-layer ceramic capacitor, silicon capacitor has more than 10 years long lifetime, extreme working temperature range, low temperature coefifcient and low energy consumption. In this paper, the dielectric property of Al2O3 film grown by atomic layer deposition were studied. By the optimization of deposition temperature and annealing parameters, it was found that the breakdown ifeld of the Al2O3 iflm is large than 0.7 V/nm and the relative permittivity is 8.7 when the iflm was grown at 420℃and annealed in O3 5 minutes. The capacitance density of the silicon capacitor has reached 50 nF/mm2 and the leakage current is less than 5 nA/mm2.