电子与封装
電子與封裝
전자여봉장
EIECTRONICS AND PACKAGING
2013年
9期
6-9,17
,共5页
敖国军%张国华%蒋长顺%张嘉欣
敖國軍%張國華%蔣長順%張嘉訢
오국군%장국화%장장순%장가흔
倒装焊%封装结构%气密性%高频电路%大功率
倒裝銲%封裝結構%氣密性%高頻電路%大功率
도장한%봉장결구%기밀성%고빈전로%대공솔
lfip chip bonding%package structure%air-tightness%high speed circuit%high power
倒装焊是今后高集成度半导体的主要发展方向之一。倒装焊器件封装结构主要由外壳、芯片、引脚(焊球、焊柱、针)、盖板(气密性封装)或散热片(非气密性封装)等组成。文章分别介绍外壳材料、倒装焊区、频率、气密性、功率等方面对倒装焊封装结构的影响。低温共烧陶瓷(LTCC)适合于高频、大面积的倒装焊芯片。大功率倒装焊散热结构主要跟功率、导热界面材料、散热材料及气密性等有关系。倒装焊器件气密性封装主要有平行缝焊或低温合金熔封工艺。
倒裝銲是今後高集成度半導體的主要髮展方嚮之一。倒裝銲器件封裝結構主要由外殼、芯片、引腳(銲毬、銲柱、針)、蓋闆(氣密性封裝)或散熱片(非氣密性封裝)等組成。文章分彆介紹外殼材料、倒裝銲區、頻率、氣密性、功率等方麵對倒裝銲封裝結構的影響。低溫共燒陶瓷(LTCC)適閤于高頻、大麵積的倒裝銲芯片。大功率倒裝銲散熱結構主要跟功率、導熱界麵材料、散熱材料及氣密性等有關繫。倒裝銲器件氣密性封裝主要有平行縫銲或低溫閤金鎔封工藝。
도장한시금후고집성도반도체적주요발전방향지일。도장한기건봉장결구주요유외각、심편、인각(한구、한주、침)、개판(기밀성봉장)혹산열편(비기밀성봉장)등조성。문장분별개소외각재료、도장한구、빈솔、기밀성、공솔등방면대도장한봉장결구적영향。저온공소도자(LTCC)괄합우고빈、대면적적도장한심편。대공솔도장한산열결구주요근공솔、도열계면재료、산열재료급기밀성등유관계。도장한기건기밀성봉장주요유평행봉한혹저온합금용봉공예。
Flip chip bonding is one of development trend of high-integrated semiconductor for the future. Flip chip device includes carrier substrate, integrated circuit, pin(solder ball, solder column, pin), lid (hermetic package)or heat spreader(nonhermetic package). The article describes the relation of lfip chip package structure with package material, lfip chip bonding area, frequency, air-tightness, power etc. Low temperature co-ifred ceramic is ift for the lfip chip of high frequency and large area. Power, thermal interface material, heat spreader and air-tightness determine the dissipation structure of high power lfip chip. There are parallel seam welding and low temperature solder sealing for hermetic package of lfip chip device.