原子能科学技术
原子能科學技術
원자능과학기술
ATOMIC ENERGY SCIENCE AND TECHNOLOGY
2014年
11期
1938-1942
,共5页
陈林%李科学%王庆富%王小红%管卫军
陳林%李科學%王慶富%王小紅%管衛軍
진림%리과학%왕경부%왕소홍%관위군
贫铀%磁控溅射%镍镀层%电化学腐蚀
貧鈾%磁控濺射%鎳鍍層%電化學腐蝕
빈유%자공천사%얼도층%전화학부식
depleted uranium%magnetron sputter ion plating%Ni coating%electrochemi-cal corrosion
采用磁控溅射离子镀膜技术在贫铀表面制备金属镍镀层,利用电化学测试技术研究了镍镀层在Cl-溶液中的电化学腐蚀行为。结果表明:在含50μg/g Cl-的KCl溶液中,镍镀层的腐蚀电位-100.8 mV高于贫铀的腐蚀电位-641.2 m V ,相对于贫铀是阴极性镀层,对贫铀的保护基于对腐蚀介质的物理屏障;镀镍贫铀样品的极化电阻和电化学阻抗幅值远大于贫铀,其腐蚀电流远小于贫铀;约70 h的连续腐蚀实验中镍镀层未出现镀层破裂、剥落现象,且腐蚀电位、电流保持稳定。说明镍镀层对贫铀基体具有良好的防腐蚀性能。
採用磁控濺射離子鍍膜技術在貧鈾錶麵製備金屬鎳鍍層,利用電化學測試技術研究瞭鎳鍍層在Cl-溶液中的電化學腐蝕行為。結果錶明:在含50μg/g Cl-的KCl溶液中,鎳鍍層的腐蝕電位-100.8 mV高于貧鈾的腐蝕電位-641.2 m V ,相對于貧鈾是陰極性鍍層,對貧鈾的保護基于對腐蝕介質的物理屏障;鍍鎳貧鈾樣品的極化電阻和電化學阻抗幅值遠大于貧鈾,其腐蝕電流遠小于貧鈾;約70 h的連續腐蝕實驗中鎳鍍層未齣現鍍層破裂、剝落現象,且腐蝕電位、電流保持穩定。說明鎳鍍層對貧鈾基體具有良好的防腐蝕性能。
채용자공천사리자도막기술재빈유표면제비금속얼도층,이용전화학측시기술연구료얼도층재Cl-용액중적전화학부식행위。결과표명:재함50μg/g Cl-적KCl용액중,얼도층적부식전위-100.8 mV고우빈유적부식전위-641.2 m V ,상대우빈유시음겁성도층,대빈유적보호기우대부식개질적물리병장;도얼빈유양품적겁화전조화전화학조항폭치원대우빈유,기부식전류원소우빈유;약70 h적련속부식실험중얼도층미출현도층파렬、박락현상,차부식전위、전류보지은정。설명얼도층대빈유기체구유량호적방부식성능。
The Ni film was prepared by magnetron sputtering ion plating to improve the corrosion resistance of depleted uranium . T he corrosion resistance of the Ni film w as examined by electrochemical corrosion station .The results show that the Ni film corro‐sion potential is -100.8 mV ,w hereas it is -641.2 mV for depleted uranium in 50 μg/g KCl solution .The Ni film is a barrier to protect the depleted uranium substrate avoiding the corrosive media attack .The Ni film polarization resistance and impedance are much higher ,while the corrosion current density is much lower contrast with depleted urani‐um .None crack or flake is found through 70 h corrosion .The corrosion resistance and corrosion current keep stable .It is indicated that the corrosion resistance of depleted uranium is effectively improved after deposited Ni film by magnetron sputtering ion plating .