CAJ | 학술논문

在无匹配层、常温、溅射气体为纯Ar的条件下，利用直流磁控溅射法在Si表面制备了 Ta薄膜，系统研究了工作气压及直流功率对薄膜电阻率及微观结构的影响。分别用四探针测试仪、X射线衍射仪、原子力显微镜对不同条件下制备的 Ta 薄膜电阻率、相结构及表面形貌进行表征。结果发现，随溅射气压升高，高阻β相出现，薄膜电阻率随之增大；在相同溅射气压下，随着溅射功率的增加，薄膜电阻率先降低后升高。优化溅射工艺后制得的Ta薄膜的电阻率低至29.7μΩ·cm。
재무필배층、상온、천사기체위순Ar적조건하，이용직류자공천사법재Si표면제비료 Ta박막，계통연구료공작기압급직류공솔대박막전조솔급미관결구적영향。분별용사탐침측시의、X사선연사의、원자력현미경대불동조건하제비적 Ta 박막전조솔、상결구급표면형모진행표정。결과발현，수천사기압승고，고조β상출현，박막전조솔수지증대；재상동천사기압하，수착천사공솔적증가，박막전조솔선강저후승고。우화천사공예후제득적Ta박막적전조솔저지29.7μΩ·cm。
Tantalum films deposited on silicon substrates by DC magnetron sputtering at different sputtering pressure and sputtering power,which were prepared in pure argon at room temperature without underlayer, have been studied.The film resistivity,crystalline phase and surface morphology were investigated with four point probe,X-ray diffraction and atomic force microscope.The results showed that the film resistivity in-creased due to the appearance of tetragonal crystalline structure (β-phase)with increasing the sputtering pres-sure.Under the same sputtering pressure,the film resistivity first decreased and then increased when the sput-tering power gradually increased.Lowest film resistivity which was 29.7μΩ·cm,has been obtained at an opti-mized condition.