CAJ | 학술논문

目的：获得结晶好、连续均匀的 CuS 薄膜。方法采用电沉积方法制备 CuS 薄膜,研究络合剂、硫源及铜硫离子比例对镀液电化学性能的影响,分析不同沉积电位下所得薄膜的相组成。结果柠檬酸钠的络合效果最好,EDTA 最差；硫代硫酸钠作为硫源时,其还原电位较硫脲为硫源时正,氧化电位较负,水平距离值较小,更容易实现共沉积；铜硫离子比例为1时,施镀最合适。沉积电位为-0.8 V 时,薄膜的XRD 图谱中有氧化亚铜的衍射峰；当沉积电位在-0.9 V 时,生成了 Cu2 S 相；沉积电位在-0.9~-1.2 V时,生成了目标产物 CuS,并且-1.2 V 时的衍射峰强度比较高,结晶良好。结论最佳沉积条件如下：柠檬酸钠为络合剂,硫代硫酸钠为硫源,铜硫离子比为1,沉积电位为-1.2 V。
목적：획득결정호、련속균균적 CuS 박막。방법채용전침적방법제비 CuS 박막,연구락합제、류원급동류리자비례대도액전화학성능적영향,분석불동침적전위하소득박막적상조성。결과저몽산납적락합효과최호,EDTA 최차；류대류산납작위류원시,기환원전위교류뇨위류원시정,양화전위교부,수평거리치교소,경용역실현공침적；동류리자비례위1시,시도최합괄。침적전위위-0.8 V 시,박막적XRD 도보중유양화아동적연사봉；당침적전위재-0.9 V 시,생성료 Cu2 S 상；침적전위재-0.9~-1.2 V시,생성료목표산물 CuS,병차-1.2 V 시적연사봉강도비교고,결정량호。결론최가침적조건여하：저몽산납위락합제,류대류산납위류원,동류리자비위1,침적전위위-1.2 V。
Objective To get good crystallization and continuous uniform CuS thin film. Methods The Cus thin film was pre-pared by the method of electrodeposition, so as to investigate the effect of complexing agent, sulfur sources and copper sulfion ion proportion on electrochemical properties of the plating solution, and analyze the phase composition of thin film in different deposi-tion potential. Results The experimental results showed that sodium citrate was the best complexing agent, while EDTA was the worst. When choosing sodium thiosulfate as the source of sulfur, its reduction potential compared with thiourea would be more posi-tive, oxidation potential would be more negative and the horizontal distance would have smaller values, which was easier to imple-ment codeposition. The ratio of copper sulfide ion to 1 was the most suitable plating condition. When the deposition potential at-0. 8 V, the XRD atlas of thin film appeared the diffraction peaks of cuprous oxide; when the deposition potential at -0. 9 V, Cu2 S phase generated; when the deposition potential at -0. 9 ~ -1. 2 V, the target products CuS was produced, and the diffraction peaks intensity were higher. Conclusion The best depositional conditions are as following: sodium citrate as complexing agent, so-dium thiosulfate as a source of sulfur, the ratio of copper and sulfur ion to 1, deposition potential at -1. 2 V.