CAJ | 학술논문

采用传统生长模式和脉冲生长模式开展了蓝宝石衬底上AlN薄膜外延生长研究。通过XRD、透射谱、Raman等分析手段，研究了不同生长模式对AlN薄膜质量的影响，研究发现采用脉冲生长模式的样品与采用传统生长模式的样品相比，晶体质量显著地提高，AlNω(102)的FWHM从2093 arcsec减少到835 arcsec，有效的限制了深能级缺陷。由于采用脉冲生长模式样品中的位错密度较小，所以样品中的残余应力略有提高。研究结果表明脉冲生长模式能有效的提高蓝宝石衬底上AlN晶体质量。
채용전통생장모식화맥충생장모식개전료람보석츤저상AlN박막외연생장연구。통과XRD、투사보、Raman등분석수단，연구료불동생장모식대AlN박막질량적영향，연구발현채용맥충생장모식적양품여채용전통생장모식적양품상비，정체질량현저지제고，AlNω(102)적FWHM종2093 arcsec감소도835 arcsec，유효적한제료심능급결함。유우채용맥충생장모식양품중적위착밀도교소，소이양품중적잔여응력략유제고。연구결과표명맥충생장모식능유효적제고람보석츤저상AlN정체질량。
Tradition and pulse mode were investigated for the growth of AlN layers on sapphire substrate. Even though the AlN layers were grown under the same conditions. The crystalline quality was investigated by XRD raman and transmission spectrum. There is a clear relationship between the dislocation density and the qualityof AlN films. Furthermore, it was found that dislocation were suppressed by pulse mode. AlNω(102)FWHM from 2093 arcsec release to 835 arcsec. The pulse mode method is an effective way to improve the crystalline quality of the AlN expilayers.