CAJ | 학술논문

利用离子束溅射制备双层 Ge/Si 量子点，通过变化 Si 隔离层厚度和 Ge 沉积量研究了埋层应变场对量子点生长的影响。实验中观察到隔离层厚度较薄时，双层结构中第2层量子点形成的临界厚度减小，生长过程提前；此外，随着 Ge 沉积量的增加，第2层量子点密度维持在一定范围，分布被调制的同时岛均匀长大呈现单模分布。增大隔离层厚度，埋层岛的生长模式在第2层岛生长时得到复制。通过隔离层传递的不均匀应变场解释了量子点生长模式的变化。
이용리자속천사제비쌍층 Ge/Si 양자점，통과변화 Si 격리층후도화 Ge 침적량연구료매층응변장대양자점생장적영향。실험중관찰도격리층후도교박시，쌍층결구중제2층양자점형성적림계후도감소，생장과정제전；차외，수착 Ge 침적량적증가，제2층양자점밀도유지재일정범위，분포피조제적동시도균균장대정현단모분포。증대격리층후도，매층도적생장모식재제2층도생장시득도복제。통과격리층전체적불균균응변장해석료양자점생장모식적변화。
Double-layers Ge/Si quantum dot samples were grown on Si(100)substrate by ion beam sputtering system.The influence of buried strain on the growth of islands on the upper layer was studied by varying the thickness of Si spacer-layer and Ge deposition.When the thickness of spacer-layer was thin,the results show that a reduction of wetting-layer thickness of islands on the upper layer.In addition,with increasing the thick-ness of Ge deposition,the growth of islands on the second layer was modulated.Increasing the thickness of spacer-layer,the growth of islands on the second layer follows the buried dots.The change of growth mode was explained by the non-uniform strain field induced by the buried islands and passing through the spacer-layer.