CAJ | 학술논문

在Ar气气氛下对热氧化n型4H-SiC生长的SiO 2薄膜进行了1100℃以下不同温度的退火，采用反射式椭圆偏振光谱、红外透射光谱研究了退火温度对SiO 2薄膜致密性的影响。椭偏测试的结果表明，600℃退火后样品具有最大的折射率1.47和最小的厚度84.63 nm。红外研究的结果显示，600℃退火后LO峰强度最强，认为是对应Si-O结构单元浓度最高。Al/SiO 2/SiC MOS结构SiO2的漏电特性研究表明，600℃退火后的SiO2薄膜漏电流相比于其他温度退火的氧化层漏电流小了两个数量级。在外加反向偏压5 V时，漏电流密度仅仅只有5×10-8 A/cm2。600℃退火能显著地改善热氧化层SiO 2的致密性。
재Ar기기분하대열양화n형4H-SiC생장적SiO 2박막진행료1100℃이하불동온도적퇴화，채용반사식타원편진광보、홍외투사광보연구료퇴화온도대SiO 2박막치밀성적영향。타편측시적결과표명，600℃퇴화후양품구유최대적절사솔1.47화최소적후도84.63 nm。홍외연구적결과현시，600℃퇴화후LO봉강도최강，인위시대응Si-O결구단원농도최고。Al/SiO 2/SiC MOS결구SiO2적루전특성연구표명，600℃퇴화후적SiO2박막루전류상비우기타온도퇴화적양화층루전류소료량개수량급。재외가반향편압5 V시，루전류밀도부부지유5×10-8 A/cm2。600℃퇴화능현저지개선열양화층SiO 2적치밀성。
The effect of different temperature (below 1 100 ℃) post-oxidation annealing in Ar atmosphere (Ar POA) on the densification of thermally grown SiO 2 film on n-type 4H-SiC has been studied by reflective spectroscopic ellipsometry (SE) and Fourier transform infrared (FTIR) spectroscopy. The spectroscopic ellipsometry studies show that the 600 ℃ annealed SiO 2 film has the highest refractive index of 1.47 and the lowest thickness of 84.63 nm in all samples. It is obtained from FTIR that 600 ℃ annealed sample has the highest LO phonon intensity, which may be attributed to the highest concentration of Si-O bonds. The leakage current-voltage measurement of Al/SiO 2/SiC MOS capacitor was also performed. The leakage current is decreased by two orders of magnitude of the SiO 2 thin film after annealing at 600 ℃. When a reverse bias voltage of 5 V is applied, the reverse leakage current density is only 5×10-8 A/cm2. According to all studies, we conclude that annealing at 600 ℃ can greatly improve the compactness of thermally oxidized SiO2.