CAJ | 학술논문

GaN纳米柱的量子效率研究
GaN납미주적양자효솔연구
The quantum efficiency study of GaN nanorods

万方数据

南京大学学报（自然科学版）南京大學學報（自然科學版） 남경대학학보（자연과학판）
JOURNAL OF NANJING UNIVERSITY(NATURAL SCIENCES)
2014年 3期 320-324 ,共5页

李扬扬%陈鹏%蒋府龙%杨国锋%刘斌%谢自立%修向前%韩平%赵红%华雪梅%施毅%张荣%郑有炓

리양양%진붕%장부룡%양국봉%류빈%사자립%수향전%한평%조홍%화설매%시의%장영%정유료

GaN纳米柱%光致发光(PL)%量子效率 GaN納米柱%光緻髮光(PL)%量子效率
GaN납미주%광치발광(PL)%양자효솔
GaN nanorods%photoluminescence(PL)%quantum efficiency

主要通过低温和室温变功率光致发光(PL)谱的实验手段,研究了 GaN纳米柱和对应薄膜(作为参考)的量子效率表现.实验中发现在室温,激发光功率为0.5 mW时,GaN纳米柱的积分 PL强度是薄膜的12.2倍,这表明GaN纳米柱具有比薄膜更高的内量子效率和光引出效率.另外,依据高低温积分 PL 强度比的方法计算得到激发光功率0.5 mW时,GaN纳米柱的内量子效率低于薄膜,该计算结果违背由实验现象得到的结果,这表明该内量子效率的计算方法是不合适的,因而建立了一种新模型,得到 GaN纳米柱和薄膜的内量子效率比随激发光功率的变化规律,结果表明 GaN纳米柱的内量子效率表现显著优于薄膜.
주요통과저온화실온변공솔광치발광(PL)보적실험수단,연구료 GaN납미주화대응박막(작위삼고)적양자효솔표현.실험중발현재실온,격발광공솔위0.5 mW시,GaN납미주적적분 PL강도시박막적12.2배,저표명GaN납미주구유비박막경고적내양자효솔화광인출효솔.령외,의거고저온적분 PL 강도비적방법계산득도격발광공솔0.5 mW시,GaN납미주적내양자효솔저우박막,해계산결과위배유실험현상득도적결과,저표명해내양자효솔적계산방법시불합괄적,인이건립료일충신모형,득도 GaN납미주화박막적내양자효솔비수격발광공솔적변화규률,결과표명 GaN납미주적내양자효솔표현현저우우박막.
The purpose of the study is to compare the quantum efficiency performance of GaN nanorods and as-grown planar by excitation power dependent photoluminescence(PL)at the temperature of 6 and 300K.An enhancement of 12.2 times in the room temperature integrated PL intensity is observed from the GaN nanorods,in comparison to that of as-grown planar, with the excitation power of 0.5 mW.This large integrated PL intensity enhancement of GaN nanorods can be attributed to the improvement of internal quantum efficiency (IQE)as well as light extraction efficiency.However,the IQE of GaN nanorods is smaller than that of as-grown planar by using traditional method of calculating IQE,defined as IQE=IPL300K/IPL6K ,with the excitation power of 0.5 mW,which is opposite to the above experimental phenomena.It means that the traditional method is inappropriate.Therefore,a new model for calculating IQE is put forward.According to the new model, the ratio of IQE of GaN nanorods over that of as-grown planar as a function of excitation power at 6 and 300K can be achieved.The result turns out that the IQE performance of GaN nanorods is significantly better than that of as-grown planar,which is in agreement with the above experimental phenomena.