CAJ | 학술논문

金属-氧化物半导体场效应晶体管（MOSFET）的界面态影响器件的正常性能发挥。本文采用在合金制程中通入氢气的方法，并通过电荷泵(Charge Pumping)技术手段测量定性，反映氢气在金属合金（Metal Alloy）制程中对界面态的改善作用。实验结果表明界面态密度的降低不仅与合金制程中通氢气的时间有关，而且与氢气的流量也有关。为工艺改进和提升器件成品率，可靠性提供重要参考信息。
금속-양화물반도체장효응정체관（MOSFET）적계면태영향기건적정상성능발휘。본문채용재합금제정중통입경기적방법，병통과전하빙(Charge Pumping)기술수단측량정성，반영경기재금속합금（Metal Alloy）제정중대계면태적개선작용。실험결과표명계면태밀도적강저불부여합금제정중통경기적시간유관，이차여경기적류량야유관。위공예개진화제승기건성품솔，가고성제공중요삼고신식。
Si-SiO2 Interface states in metal-oxide-silicon field effect transistors (MOSFET) impact device normal performance. We adopt pure H2 metal alloy and use charge pumping measurement to reflect improvement of pure H2 alloy on interface states in MOSFET. In this paper, we present the experimental results on the effect of H2 ambiences on the interface states density reduction and the reduction is not only related with the alloy time, but also related with H2 flow rate. Therefore, the experiment can provide important information for the process optimization, yield and reliability improvement.