CAJ | 학술논문

利用MOCVD法,在7．62 cm蓝宝石衬底上生长了InAlN薄膜及InAlN/GaN 异质结材料.利用XRD、AFM、Hall 等测试方法对材料的组分、表面形貌、电学性质等进行了分析,InAlN 薄膜中 In 含量随生长温度的升高明显降低,材料表面为三维岛状结构；与AlGaN/GaN异质结材料相比,InAlN/GaN 异质结的高温电子输运特性更好,773 K 下 InAlN/GaN 异质结的迁移率为130 cm2/(v?s),明显高于 AlGaN/GaN异质结的67 cm2/(v?s).
이용MOCVD법,재7．62 cm람보석츤저상생장료InAlN박막급InAlN/GaN 이질결재료.이용XRD、AFM、Hall 등측시방법대재료적조분、표면형모、전학성질등진행료분석,InAlN 박막중 In 함량수생장온도적승고명현강저,재료표면위삼유도상결구；여AlGaN/GaN이질결재료상비,InAlN/GaN 이질결적고온전자수운특성경호,773 K 하 InAlN/GaN 이질결적천이솔위130 cm2/(v?s),명현고우 AlGaN/GaN이질결적67 cm2/(v?s).
InAlN thin films and microstructures were grown on 7.62 cm sapphire substrates by MOCVD.In con-tent,surface morphology,electronic properties were characterized by XRD,AFM and Hall.The results indicated that the In content decrease with increasing growth temperature and the surface of the InAlN film was three di-mensional like.High temperature hall tests showed that high temperature electron mobility was much higher for InAlN/GaN compared to AlGaN/GaN heterostructure.