物理化学学报
物理化學學報
물이화학학보
ACTA PHYSICO-CHIMICA SINICA
2014年
3期
576-582
,共7页
锌-镉-硫%纳米线%气相沉积法%组成可调%光学性质可调
鋅-鎘-硫%納米線%氣相沉積法%組成可調%光學性質可調
자-력-류%납미선%기상침적법%조성가조%광학성질가조
Zinc-cadmium-sulfur%Nanowire%Vapor deposition%Tunable composition%Tunable optical property
采用简单的气相沉积法，合成了不同组成的ZnxCd1-xS (0<x<1)纳米线.利用扫描电子显微镜、透射电子显微镜和电子能谱研究了所制得的纳米线的表面形貌和组成.该方法以Au为催化剂，简单控制起始物质的相对用量和沉积温度，可以获得可控的Zn/Cd比例. X射线衍射结果表明所制得的ZnxCd1-xS纳米线具有纤维锌矿的单晶结构.根据制得纳米线的表面形貌讨论了纳米线可能的生长机理为“底部生长”机理.利用拉曼光谱和光致发光光谱研究了ZnxCd1-xS纳米线的光学性质，其纵向光学(LO)声子的拉曼位移频率随着组成的变化在ZnS和CdS的拉曼位移频率之间连续变化.光致发光光谱中同时存在带边发光和缺陷发光. ZnxCd1-xS纳米线的带间跃迁的频率可随着组成的调节而调节，纳米线的禁带宽度介于ZnS (3.63 eV)和CdS (2.41 eV)的禁带宽度之间.
採用簡單的氣相沉積法，閤成瞭不同組成的ZnxCd1-xS (0<x<1)納米線.利用掃描電子顯微鏡、透射電子顯微鏡和電子能譜研究瞭所製得的納米線的錶麵形貌和組成.該方法以Au為催化劑，簡單控製起始物質的相對用量和沉積溫度，可以穫得可控的Zn/Cd比例. X射線衍射結果錶明所製得的ZnxCd1-xS納米線具有纖維鋅礦的單晶結構.根據製得納米線的錶麵形貌討論瞭納米線可能的生長機理為“底部生長”機理.利用拉曼光譜和光緻髮光光譜研究瞭ZnxCd1-xS納米線的光學性質，其縱嚮光學(LO)聲子的拉曼位移頻率隨著組成的變化在ZnS和CdS的拉曼位移頻率之間連續變化.光緻髮光光譜中同時存在帶邊髮光和缺陷髮光. ZnxCd1-xS納米線的帶間躍遷的頻率可隨著組成的調節而調節，納米線的禁帶寬度介于ZnS (3.63 eV)和CdS (2.41 eV)的禁帶寬度之間.
채용간단적기상침적법，합성료불동조성적ZnxCd1-xS (0<x<1)납미선.이용소묘전자현미경、투사전자현미경화전자능보연구료소제득적납미선적표면형모화조성.해방법이Au위최화제，간단공제기시물질적상대용량화침적온도，가이획득가공적Zn/Cd비례. X사선연사결과표명소제득적ZnxCd1-xS납미선구유섬유자광적단정결구.근거제득납미선적표면형모토론료납미선가능적생장궤리위“저부생장”궤리.이용랍만광보화광치발광광보연구료ZnxCd1-xS납미선적광학성질，기종향광학(LO)성자적랍만위이빈솔수착조성적변화재ZnS화CdS적랍만위이빈솔지간련속변화.광치발광광보중동시존재대변발광화결함발광. ZnxCd1-xS납미선적대간약천적빈솔가수착조성적조절이조절，납미선적금대관도개우ZnS (3.63 eV)화CdS (2.41 eV)적금대관도지간.
ZnxCd1-xS (0<x<1) nanowires with several different compositions were successful y synthesized on Si wafers by a simple vapor deposition method using Au as a catalyst. The morphology and composition of the nanowires were investigated by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectroscopy. The results show that the Zn/Cd ratio is control able by adjusting the relative amount of the starting materials and the deposition temperature. The X-ray diffraction patterns show that the nanowires are single crystals with the wurtzite structure. The morphology character of the nanowires suggests that the growth of the nanowires can be explained by the base-growth mechanism. The optical characteristics of the nanowires were studied by Raman and photoluminescence (PL) spectroscopy. Raman shifts of the longitudinal optical (LO) phonon mode were observed in the ZnxCd1-xS nanowires. The LO peak frequency changed smoothly with changing composition, which approximately shows a one-mode behavior pattern in the ZnxCd1-xS nanowires. In the PL spectra, both band-gap and defect emission were observed. The PL results indicate that the emission frequency originating from the band-gap transition of the ZnxCd1-xS nanowires can be tuned through modulating of the composition. The band-gap of the nanowires can be tuned from 2.41 eV (CdS) to 3.63 eV (ZnS).
