电加工与模具
電加工與模具
전가공여모구
ELECTROMACHINING & MOULD
2014年
1期
24-27
,共4页
吴修娟%曾永彬%曲宁松%王玉峰%朱荻
吳脩娟%曾永彬%麯寧鬆%王玉峰%硃荻
오수연%증영빈%곡저송%왕옥봉%주적
Ag纳米线%微纳工具电极%微纳电解加工%离子溅射
Ag納米線%微納工具電極%微納電解加工%離子濺射
Ag납미선%미납공구전겁%미납전해가공%리자천사
Ag nanowires%micro-nano tool electrode%micro-nano electrochemical machining%ion sputtering
采用尖端自组装了Ag纳米线的扫描隧道显微镜探针作为微纳工具电极进行电解加工试验研究。加工过程中发现Ag纳米线与电解液发生反应而溶解。为了使Ag纳米线稳定用于电解加工,对其表面溅射金属Au。试验结果表明,当溅射层厚度为27 nm和55 nm时,溅射层不够致密,Ag纳米线仍会发生溶解;当溅射层厚度为310 nm时,过厚的溅射层使Ag纳米线发生弯曲,从而使Ag纳米线与扫描隧道显微镜探针尖端的结合力变小并发生脱落;当溅射层厚度为150 nm和240 nm时,Ag纳米线在电解加工中均能保持稳定。采用溅射层厚度为150 nm的Ag纳米线进行微纳电解加工。在0.1 mol/L的H2SO4电解液中,施加电压4 V、周期50 ns、脉宽6 ns的纳秒脉宽脉冲电流,在高温合金试件表面成功加工出微纳沟槽,沟槽深约110 nm,入口最宽处约1μm。
採用尖耑自組裝瞭Ag納米線的掃描隧道顯微鏡探針作為微納工具電極進行電解加工試驗研究。加工過程中髮現Ag納米線與電解液髮生反應而溶解。為瞭使Ag納米線穩定用于電解加工,對其錶麵濺射金屬Au。試驗結果錶明,噹濺射層厚度為27 nm和55 nm時,濺射層不夠緻密,Ag納米線仍會髮生溶解;噹濺射層厚度為310 nm時,過厚的濺射層使Ag納米線髮生彎麯,從而使Ag納米線與掃描隧道顯微鏡探針尖耑的結閤力變小併髮生脫落;噹濺射層厚度為150 nm和240 nm時,Ag納米線在電解加工中均能保持穩定。採用濺射層厚度為150 nm的Ag納米線進行微納電解加工。在0.1 mol/L的H2SO4電解液中,施加電壓4 V、週期50 ns、脈寬6 ns的納秒脈寬脈遲電流,在高溫閤金試件錶麵成功加工齣微納溝槽,溝槽深約110 nm,入口最寬處約1μm。
채용첨단자조장료Ag납미선적소묘수도현미경탐침작위미납공구전겁진행전해가공시험연구。가공과정중발현Ag납미선여전해액발생반응이용해。위료사Ag납미선은정용우전해가공,대기표면천사금속Au。시험결과표명,당천사층후도위27 nm화55 nm시,천사층불구치밀,Ag납미선잉회발생용해;당천사층후도위310 nm시,과후적천사층사Ag납미선발생만곡,종이사Ag납미선여소묘수도현미경탐침첨단적결합력변소병발생탈락;당천사층후도위150 nm화240 nm시,Ag납미선재전해가공중균능보지은정。채용천사층후도위150 nm적Ag납미선진행미납전해가공。재0.1 mol/L적H2SO4전해액중,시가전압4 V、주기50 ns、맥관6 ns적납초맥관맥충전류,재고온합금시건표면성공가공출미납구조,구조심약110 nm,입구최관처약1μm。
The scanning tunnel microscope probe,which tip is self-assembled of Ag nanowire,is used as a tool electrode in micro-nano electrochemical machining. It is found that the Ag nanowires occur reaction with electrolyte and dissolve in the machining process. In order to improve the stability of Ag nanowire in micro-nano electrochemical machining, the method of sputtering Au on the surface of Ag nanowire is developed. The research indicates that the nanowire electrode dissolves yet during electrochemical machining when the thickness of the sputtering layer is about 27 nm and 55 nm due to loose sputtering layer,while it is bent because of large internal stress when the thickness of the sputtering layer is about 310 nm and the bent nanowire falls away from the tip of scanning tunnel microscope probe due to decreased adhesion at the juncture. The Ag nanowire is still unchanged in the electrochemical reaction,when the thickness of the sputtering layer is about 150 nm and 240 nm. The nanowire electrode with the thickness of the sputtering layer of about 150 nm is used in micro-nano electrochemical machining. The groove of 110 nm in depth and 1 μm in the entrances width is prepared successfully by using the pulse period of 50 ns,pulse on-time of 6 ns,the voltage of 4 V and 0.1 mol/L H2SO4 electrolyte in the surface of high-temperature alloys workpiece.