CAJ | 학술논문

提出一种适用于红外焦平面阵列传感器的高精度BiCMOS电压基准和电流基准设计方案。该方案采用新型电压基准输出级降低Brokaw带隙基准源中的厄尔利效应使电流镜电流完全匹配,同时减小电压基准的输出阻抗；接着利用共源共栅结构的偏置电流提高带隙基准的电源抑制PSR( Power Supply Rejection)特性；最后通过4个MOSFET管将基准电压和电阻电压钳制相等,进而得到一个高精度、低温度系数的电流基准；而以单个二极管连接的MOSFET作为电流基准启动电路的方式,可更进一步降低电路复杂性。系统采用CSMC 0.5μm BiCMOS工艺,利用Cadence Spectre工具对电路进行仿真。结果表明,在电源电压5 V,-40℃到125℃温度范围内,基准电压和基准电流的温度系数分别为13×10-6/℃和31×10-6/℃,输出电流波动低于0.5%,整体电路的PSR为-86.83 dB,解决了恒定跨导基准源精度低的缺陷,符合红外焦平面阵列对基准源高精度、高PSR和低功耗的要求。
제출일충괄용우홍외초평면진열전감기적고정도BiCMOS전압기준화전류기준설계방안。해방안채용신형전압기준수출급강저Brokaw대극기준원중적액이리효응사전류경전류완전필배,동시감소전압기준적수출조항；접착이용공원공책결구적편치전류제고대극기준적전원억제PSR( Power Supply Rejection)특성；최후통과4개MOSFET관장기준전압화전조전압겸제상등,진이득도일개고정도、저온도계수적전류기준；이이단개이겁관련접적MOSFET작위전류기준계동전로적방식,가경진일보강저전로복잡성。계통채용CSMC 0.5μm BiCMOS공예,이용Cadence Spectre공구대전로진행방진。결과표명,재전원전압5 V,-40℃도125℃온도범위내,기준전압화기준전류적온도계수분별위13×10-6/℃화31×10-6/℃,수출전류파동저우0.5%,정체전로적PSR위-86.83 dB,해결료항정과도기준원정도저적결함,부합홍외초평면진렬대기준원고정도、고PSR화저공모적요구。
A high precision BiCMOS voltage and current reference for infrared focal plane array sensor are presented,which have advantages over traditional Brokaw bandgap reference in terms of Early effect reduction and biasing current matching for current mirror. The proposed circuit still allows the voltage reference to operate with an attractive low output resistance and utilizes cascode biasing current source to enhance PSR performance. And then, the high precision and simplified current reference is obtained by clamping reference voltage equal to the voltage across the resistance. Also,one diode-connected is introduced to further simply the whole circuit. The system has been simulated using Cadence Spectre tool in CSMC 0. 5 μm BiCMOS technology. The results indicate that the voltage reference achieves temperature coefficient of 13×10-6/℃ from-40℃ to 125℃ with 5V supply voltage and high PSR of -86. 83 dB at 100 Hz. Moreover,the current reference generates 4 μA with a variation of 0. 5% over the same temperature range,equivalent to 31 ×10-6/℃. This reference source has high PSR,high precision and low temperature coefficient which solves the problem of low precision in constant transconductance reference source and are more suitable for infrared focal plane array.