新型工业化
新型工業化
신형공업화
New Industrialization Straregy
2012年
5期
39-46
,共8页
高斯掺杂%InGaAs耗尽区
高斯摻雜%InGaAs耗儘區
고사참잡%InGaAs모진구
Gaussian doping%depleted InGaAs region
单行载流子光探测器(UTC-PD)是一种只采用电子作为有源载流子的高速光探测器。本文研究了一种UTC-PD的吸收层采用高斯掺杂方式形成内建电场从而提高探测器高速性能的新方法。采用漂移-扩散理论分析了单行载流子光探测器（UTC-PD）的光响应特性，对影响探测器性能的因素进行分析，利用器件仿真器ATLAS对吸收层采用高斯掺杂的UTC-PD和吸收层采用均匀掺杂的UTC-PD能带结构和性能进行仿真比较。根据仿真结果显示，吸收层采用Gaussian掺杂的UTC-PD的带宽为74GHz，是吸收层采用均匀掺杂的UTC-PD的1.8倍。
單行載流子光探測器(UTC-PD)是一種隻採用電子作為有源載流子的高速光探測器。本文研究瞭一種UTC-PD的吸收層採用高斯摻雜方式形成內建電場從而提高探測器高速性能的新方法。採用漂移-擴散理論分析瞭單行載流子光探測器（UTC-PD）的光響應特性，對影響探測器性能的因素進行分析，利用器件倣真器ATLAS對吸收層採用高斯摻雜的UTC-PD和吸收層採用均勻摻雜的UTC-PD能帶結構和性能進行倣真比較。根據倣真結果顯示，吸收層採用Gaussian摻雜的UTC-PD的帶寬為74GHz，是吸收層採用均勻摻雜的UTC-PD的1.8倍。
단행재류자광탐측기(UTC-PD)시일충지채용전자작위유원재류자적고속광탐측기。본문연구료일충UTC-PD적흡수층채용고사참잡방식형성내건전장종이제고탐측기고속성능적신방법。채용표이-확산이론분석료단행재류자광탐측기（UTC-PD）적광향응특성，대영향탐측기성능적인소진행분석，이용기건방진기ATLAS대흡수층채용고사참잡적UTC-PD화흡수층채용균균참잡적UTC-PD능대결구화성능진행방진비교。근거방진결과현시，흡수층채용Gaussian참잡적UTC-PD적대관위74GHz，시흡수층채용균균참잡적UTC-PD적1.8배。
The uni-traveling-carrier photodiode (UTC-PD) is a high-speed photodiode which utilizes only electrons as its active carriers. A novel method to improve the high speed performance for photodetector by utilizing Gaussian doping to introduce an electric field in the absorption region is reported. The photoresponse characteristics of InP/InGaAs UTC-PD are investigated with drift-diffusion approach and performance limited factors are discussed. The characteristics of the UTC-PD with Gaussian doping in absorption layer and that with constant doping in absorption layer are modeled using ATLAS device simulator and the comparisons are made. According to the comparison, an optimized UTC-PD Gaussian doping in the absorption layer is presented, with of 74GHz, which is more than 1.8 times higher than that with the constant doping in the absorption layer.
