CAJ | 학술논문

室温下将130 keV，5×1014 cm-2 B离子和55 keV，1×1016 cm-2 H离子单独或顺次注入到单晶Si中，采用横截面试样透射电子显微镜(XTEM)和慢正电子湮没技术(SPAT)研究了离子注入引起的微观缺陷的产生及其热演变。XTEM观测结果显示，B和H离子顺次注入到单晶Si可有效减少(111)取向的H板层缺陷，并促进了(100)取向的H板层缺陷的择优生长。SPAT观测结果显示，在顺次注入的样品中，B离子平均射程处保留了大量的空位型缺陷。以上结果表明，B离子本身及B离子注入所产生的空位型缺陷对板层缺陷的生长起到了促进作用。
실온하장130 keV，5×1014 cm-2 B리자화55 keV，1×1016 cm-2 H리자단독혹순차주입도단정Si중，채용횡절면시양투사전자현미경(XTEM)화만정전자인몰기술(SPAT)연구료리자주입인기적미관결함적산생급기열연변。XTEM관측결과현시，B화H리자순차주입도단정Si가유효감소(111)취향적H판층결함，병촉진료(100)취향적H판층결함적택우생장。SPAT관측결과현시，재순차주입적양품중，B리자평균사정처보류료대량적공위형결함。이상결과표명，B리자본신급B리자주입소산생적공위형결함대판층결함적생장기도료촉진작용。
Cz n-type Si (100) wafers were singly or sequentially implanted at room temperature with 130 keV B ions at a fluence of 5 × 1014 cm-2 and 55 keV H ions at a fluence of 1 × 1016 cm-2 . The implantation-induced defects were investigated in detail by using cross-sectional transmission electron microscopy (XTEM) and slow positron annihilation technique (SPAT). XTEM results clearly show that sequential implantation of B and H ions into Si could eliminate the (111) platelets and promote growth of (100) platelets during annealing. SPAT measurements demonstrate that in B and H sequentially implanted and annealed Si, more vacancy-type defects could remain in sample region around the range of B ions. These results indicate that the promotion effect should be attributed to the role of both B and B implanted induced vacancy-type defects.