杭州电子科技大学学报
杭州電子科技大學學報
항주전자과기대학학보
JOURNAL OF HANGZHOU DIANZI UNIVERSITY
2013年
6期
17-20
,共4页
砷化镓场效应管%毫米波%二倍频器
砷化鎵場效應管%毫米波%二倍頻器
신화가장효응관%호미파%이배빈기
GalnumArsenide field effect transistor%millimeter-wave%frequency doubler
利用砷化镓场效应管器件的非线性特性设计了一个单端毫米波段二倍频器，输入频率为27次谐波抑制大于25 dB。芯片总面积（含pad）为1．068 mm ×0．495 mm。
利用砷化鎵場效應管器件的非線性特性設計瞭一箇單耑毫米波段二倍頻器，輸入頻率為27次諧波抑製大于25 dB。芯片總麵積（含pad）為1．068 mm ×0．495 mm。
이용신화가장효응관기건적비선성특성설계료일개단단호미파단이배빈기，수입빈솔위27차해파억제대우25 dB。심편총면적（함pad）위1．068 mm ×0．495 mm。
A single-ended millimeter-wave frequency doubler imposing on the nonlinear characteristic of GaAs field effect transistor is presented .Its input frequency is 27 33 GHz, and output frequency is 54 66 GHz. The frequency doubler is included a nonlinear device , matching circuit , and a biasing circuit . For a fundamental input power of 5 dBm, this frequency doubler demonstrates an output power between 2.3 and 0 dBm, the fundamental rejection is beyond 15 dB and the third harmonic frequency rejection is over 25 dB. The total size of this compact chip is 1.068 mm ×0.495 mm.
