中国有色金属学报
中國有色金屬學報
중국유색금속학보
THE CHINESE JOURNAL OF NONFERROUS METALS
2013年
11期
3184-3188
,共5页
王红星%柳秉毅%杨少锋%张炎
王紅星%柳秉毅%楊少鋒%張炎
왕홍성%류병의%양소봉%장염
CeO2%渗Si层%氧化性能%Ni-Si金属间化合物
CeO2%滲Si層%氧化性能%Ni-Si金屬間化閤物
CeO2%삼Si층%양화성능%Ni-Si금속간화합물
CeO2%siliconized coating%oxidation resistance%Ni-Si intermetallic compound
采用浆料包渗法,以SiO 2粉为渗Si源,纯Al粉为还原剂,NH 4 Cl作为活化剂,Al 2 O 3为惰性添加剂,蛋白质(鸡蛋清)为粘结剂,在Cu表面预先镀Ni,随后表面浆料包渗Si制备渗层。研究CeO 2氧化物对渗Si层组织和氧化性能影响。结果表明:渗剂中添加CeO 2氧化物后,渗层组织由以Ni 31 Si 12+Ni 2 Si金属间化合物为主转变为以Ni 2 Si为主与NiSi混合的金属间化合物;渗Si层氧化增质由纯铜的1/4降低到纯铜的1/14,氧化产物为SiO 2、Al 2 O 3和少量的NiO,氧化层较致密而且颗粒细小,没有明显的裂纹和空洞出现,改善了抗高温氧化性能。
採用漿料包滲法,以SiO 2粉為滲Si源,純Al粉為還原劑,NH 4 Cl作為活化劑,Al 2 O 3為惰性添加劑,蛋白質(鷄蛋清)為粘結劑,在Cu錶麵預先鍍Ni,隨後錶麵漿料包滲Si製備滲層。研究CeO 2氧化物對滲Si層組織和氧化性能影響。結果錶明:滲劑中添加CeO 2氧化物後,滲層組織由以Ni 31 Si 12+Ni 2 Si金屬間化閤物為主轉變為以Ni 2 Si為主與NiSi混閤的金屬間化閤物;滲Si層氧化增質由純銅的1/4降低到純銅的1/14,氧化產物為SiO 2、Al 2 O 3和少量的NiO,氧化層較緻密而且顆粒細小,沒有明顯的裂紋和空洞齣現,改善瞭抗高溫氧化性能。
채용장료포삼법,이SiO 2분위삼Si원,순Al분위환원제,NH 4 Cl작위활화제,Al 2 O 3위타성첨가제,단백질(계단청)위점결제,재Cu표면예선도Ni,수후표면장료포삼Si제비삼층。연구CeO 2양화물대삼Si층조직화양화성능영향。결과표명:삼제중첨가CeO 2양화물후,삼층조직유이Ni 31 Si 12+Ni 2 Si금속간화합물위주전변위이Ni 2 Si위주여NiSi혼합적금속간화합물;삼Si층양화증질유순동적1/4강저도순동적1/14,양화산물위SiO 2、Al 2 O 3화소량적NiO,양화층교치밀이차과립세소,몰유명현적렬문화공동출현,개선료항고온양화성능。
Using slurry pack cementation mixture with SiO2 as siliconizing source, pure Al powder as reducer, NH4Cl as activator, Al2O3 as inert additive and albumen (egg white) as cohesive agent, the electroplated specimens with a layer of electroplating nickel originally deposited on copper were siliconized to prepare coating. The effects of CeO 2 oxides on the microstructures and high temperature oxidation resistance of coating were studied. The results show that the phases of the coating are transformed from Ni 31 Si 12+Ni 2 Si to Ni 2 Si+NiSi intermetallics after adding CeO 2 oxides. The oxidation mass gain of Si-Al coating is decreased from 1/4 to 1/14 of that of pure copper. The oxide is primarily composed of SiO 2 , Al 2 O 3 and a small amount of NiO. The oxide layer with smaller grain size is dense without cracks and pores, which improves the high temperature oxidation resistance.