CAJ | 학술논문

作为全固态微光器件，InxGa1-xAs器件通过调节材料组分x值，其响应波段覆盖夜天光辐射的主要波段，对夜天光的能量利用率高。加之材料量子效率高，器件性能好，可望显著提高夜视系统作战距离；另外，采用半导体常规工艺制作，可完成大面阵、长线列器件制备，无需封装在(超)高真空系统，制备简单；采用CMOS读出电路进行信号数据的读取、传输与放大，有利于进行数据的处理和优化改善。由于具备的以上技术优势，InxGa1-xAs器件成为一种新型的高性能全固态数字化微光器件。 InxGa1-xAs器件与传统的微光器件在光电转换原理以及器件制备方面存在不同，决定了两者在性能上存在的差异。文中对此进行了对比分析，分析结果体现了InxGa1-xAs全固态数字化微光器件的技术优势和特点，以及InxGa1-xAs全固态数字化微光器件存在的重要应用和发展需求。
작위전고태미광기건，InxGa1-xAs기건통과조절재료조분x치，기향응파단복개야천광복사적주요파단，대야천광적능량이용솔고。가지재료양자효솔고，기건성능호，가망현저제고야시계통작전거리；령외，채용반도체상규공예제작，가완성대면진、장선렬기건제비，무수봉장재(초)고진공계통，제비간단；채용CMOS독출전로진행신호수거적독취、전수여방대，유리우진행수거적처리화우화개선。유우구비적이상기술우세，InxGa1-xAs기건성위일충신형적고성능전고태수자화미광기건。 InxGa1-xAs기건여전통적미광기건재광전전환원리이급기건제비방면존재불동，결정료량자재성능상존재적차이。문중대차진행료대비분석，분석결과체현료InxGa1-xAs전고태수자화미광기건적기술우세화특점，이급InxGa1-xAs전고태수자화미광기건존재적중요응용화발전수구。
As full solid-state low-light night vision devices, InxGa1-xAs could adjust the composition x to vary the response wavelength, which can cover the main wavelength of the night sky radiation. In addition to this, the quantum efficiency of the InxGa1-xAs material is high, and the device dark current is low, so performance of the InxGa1-xAs devices is high for the night vision system, as consequence the longer detecting distance for the system. Besides, the InxGa1-xAs arrays are made from the conventional semiconductor process without sealed in the ultrahigh vacuum. CMOS ROIC is adopted to read, transport and amplify the signal, then the signal datum is easy to handle and improve for the InxGa1-xAs low-light devices comparing the vacuum devices. The above advantages made the InxGa1-xAs devices a novel low-light device. There are lots of differences concerning the working mechanism, fabrication method, as well as the performance between InxGa1-xAs devices and vacuum one. Based on the comparison results the technique feature and the important application requirement for InxGa1-xAs solid-state low-light night vision devices were analyzed.