CAJ | 학술논문

锑化物半导体激光器在中红外波段具有广泛的应用前景。针对目前GaSb基材料的刻蚀工艺存在的问题，对现有的GaSb基材料的湿法刻蚀工艺进行了改进，实验分别用氢氟酸系和磷酸系对GaSb材料进行湿法刻蚀，并在两种酸系溶液中分别加入酒石酸进行对比试验。实验分析表明，这两种腐蚀液对GaSb材料都有较好的刻蚀效果，腐蚀速率稳定，适当调整腐蚀液组分可以调控腐蚀速率，刻蚀后形貌良好，材料表面平整光滑。其中氢氟酸系加入酒石酸后随着溶液稀释比的增加，刻蚀速率下降先快后慢，最后几乎不变化；磷酸系加入酒石酸后通过调整体系组分可以减轻湿法刻蚀工艺中广泛存在的下切效应以及钻蚀现象。
제화물반도체격광기재중홍외파단구유엄범적응용전경。침대목전GaSb기재료적각식공예존재적문제，대현유적GaSb기재료적습법각식공예진행료개진，실험분별용경불산계화린산계대GaSb재료진행습법각식，병재량충산계용액중분별가입주석산진행대비시험。실험분석표명，저량충부식액대GaSb재료도유교호적각식효과，부식속솔은정，괄당조정부식액조분가이조공부식속솔，각식후형모량호，재료표면평정광활。기중경불산계가입주석산후수착용액희석비적증가，각식속솔하강선쾌후만，최후궤호불변화；린산계가입주석산후통과조정체계조분가이감경습법각식공예중엄범존재적하절효응이급찬식현상。
Antimonide semiconductor lasers have a wide range of applications in the mid-infrared band. Based on the exist problems of GaSb-based material of the etching process, then the improvement was made. The hydrofluoric acid and phosphoric acid was used to make wet etching on GaSb respectively, and tartaric acid was added into the two acid-based solution to compare the effects. The experimental analysis shows that both of the two etching solution have a good etching effect on GaSb material, and the rate of corrosion is stable. The adjustments of the etching solution component can regulate the corrosion rate, and after etching, the morphology is good, and the material surface is smoothy. With the increase of the diluting ratio of the solution, the etch decline rate of hydrofluoric acid which add tartaric acid is fast then slow down, until it almost does not change any more. By adjusting the system components of Phosphate which add tartaric acid can reduce the widely exists undercut effect as well as the undercut phenomenon in the wet etching process.