光谱学与光谱分析
光譜學與光譜分析
광보학여광보분석
SPECTROSCOPY AND SPECTRAL ANALYSIS
2014年
1期
23-26
,共4页
张亮%贺庆丽%胡晓云%刘恩周%詹苏昌%冀若楠%敬娟
張亮%賀慶麗%鬍曉雲%劉恩週%詹囌昌%冀若楠%敬娟
장량%하경려%호효운%류은주%첨소창%기약남%경연
稀土掺杂%近红外量子剪裁%发光粉体%荧光猝灭
稀土摻雜%近紅外量子剪裁%髮光粉體%熒光猝滅
희토참잡%근홍외양자전재%발광분체%형광졸멸
Rare earth doping%Near-infrared quantum cutting%Luminescent powders%Fluorescence quenching
采用共沉淀法制备了Y2 O3∶Tb3+和Y2 O3∶ Tb3+,Yb3+两种样品。通过扫描电子显微镜(SEM )、透射电子显微镜(T EM )、X射线衍射仪(XRD )和荧光光谱仪分析和测试了样品的形貌、微结构和室温下的荧光光谱,得到了不同掺杂浓度、退火温度、溶液p H值下Y2 O3∶ T b3+的最优工艺制备条件:T b3+浓度1.5%、退火温度1400℃、溶液偏碱性环境下,样品在300 nm光激发下于543 nm处有最大绿光发射。详细分析了T b3+能级结构和跃迁属性与实验光谱的对应关系,阐述了工艺条件的影响机理和主要影响样品发光的荧光猝灭效应。制备的Y2 O3∶Tb3+,Yb3+粉体,敏化离子Tb3+与激活离子Yb3+间存在能量传递过程,使样品在近红外区有可观的发光,从能级角度对两离子间的合作下转换发光过程进行了描述,同样分析了该体系下的荧光猝灭过程。实验证明近红外量子剪裁可有效提高掺杂离子的发光效率,在硅太阳能电池等领域有广阔的应用前景。
採用共沉澱法製備瞭Y2 O3∶Tb3+和Y2 O3∶ Tb3+,Yb3+兩種樣品。通過掃描電子顯微鏡(SEM )、透射電子顯微鏡(T EM )、X射線衍射儀(XRD )和熒光光譜儀分析和測試瞭樣品的形貌、微結構和室溫下的熒光光譜,得到瞭不同摻雜濃度、退火溫度、溶液p H值下Y2 O3∶ T b3+的最優工藝製備條件:T b3+濃度1.5%、退火溫度1400℃、溶液偏堿性環境下,樣品在300 nm光激髮下于543 nm處有最大綠光髮射。詳細分析瞭T b3+能級結構和躍遷屬性與實驗光譜的對應關繫,闡述瞭工藝條件的影響機理和主要影響樣品髮光的熒光猝滅效應。製備的Y2 O3∶Tb3+,Yb3+粉體,敏化離子Tb3+與激活離子Yb3+間存在能量傳遞過程,使樣品在近紅外區有可觀的髮光,從能級角度對兩離子間的閤作下轉換髮光過程進行瞭描述,同樣分析瞭該體繫下的熒光猝滅過程。實驗證明近紅外量子剪裁可有效提高摻雜離子的髮光效率,在硅太暘能電池等領域有廣闊的應用前景。
채용공침정법제비료Y2 O3∶Tb3+화Y2 O3∶ Tb3+,Yb3+량충양품。통과소묘전자현미경(SEM )、투사전자현미경(T EM )、X사선연사의(XRD )화형광광보의분석화측시료양품적형모、미결구화실온하적형광광보,득도료불동참잡농도、퇴화온도、용액p H치하Y2 O3∶ T b3+적최우공예제비조건:T b3+농도1.5%、퇴화온도1400℃、용액편감성배경하,양품재300 nm광격발하우543 nm처유최대록광발사。상세분석료T b3+능급결구화약천속성여실험광보적대응관계,천술료공예조건적영향궤리화주요영향양품발광적형광졸멸효응。제비적Y2 O3∶Tb3+,Yb3+분체,민화리자Tb3+여격활리자Yb3+간존재능량전체과정,사양품재근홍외구유가관적발광,종능급각도대량리자간적합작하전환발광과정진행료묘술,동양분석료해체계하적형광졸멸과정。실험증명근홍외양자전재가유효제고참잡리자적발광효솔,재규태양능전지등영역유엄활적응용전경。
Y2 O3 ∶ Tb3+ and Y2 O3 ∶ Tb3+ ,Yb3+ samples were prepared by co-precipitation method .The morphology ,micro-structure and fluorescence spectra at room temperature of samples were characterized by scanning electron microscopy (SEM ) , transmission electron microscopy(TEM) ,X-ray diffraction(XRD) and fluorescence spectrometer ,The optimal process condi-tions of Y2 O3 ∶Tb3+ under different doping concentrations ,annealing temperature ,and pH value of the solution were obtained :Tb3+ concentration is 1.5% ,annealing temperature is 1 400 ℃ ,an alkaline solution environment ,and samples under 300 nm light excitation have the largest green light emission at 543 nm .The corresponding relation of Tb3+ ion level structure and tran-sition properties and experimental spectra were analyzed in detail ,and we explained the influence mechanism of process condi-tions and the fluorescence quenching process mainly effects luminous intensity of samples .The energy transfer from sensitizing ions Tb3+ to active ion Yb3+ was confirmed ,it made the sample have considerable emitting light in the near-infrared region ;the authors described the process of cooperation conversion luminescence between the two ions from the level transition angle ,and also analyzed the system of fluorescence quenching process .Test results showed that the near infrared quantum cutting can effec-tively improve the luminous efficiency of doped ions ,and will have broad application prospects in the silicon solar cells and other fields .