CAJ | 학술논문

ZnCuInS/ZnSe/ZnS量子点是一种无毒，无重金属的“绿色”半导体纳米材料。在研究中，制备了三种尺寸的ZnCuInS/ZnSe/ZnS核壳量子点，其直径分别为3.3，2.7，2.3 nm。通过测量不同尺寸的ZnCuInS/ZnSe/ZnS量子点的光致发光光谱，其发射峰值波长随尺寸的减小而蓝移。其吸收峰值波长和发射峰值波长分别是510，611（3.3 nm），483，583（2.7 nm）以及447，545 nm（2.3 nm）。ZnCuInS/ZnSe/ZnS量子点具有显著的尺寸依赖效应。ZnCuInS/ZnSe/ZnS量子点的斯托克斯位移分别为398 meV （3.3 nm ），436 meV （2.7 nm）以及498 meV（2.3 nm），这样大的斯托克斯位移证明，ZnCuInS/ZnSe/ZnS量子点的发光机制与缺陷能级有关。同时，对直径为3.3 nm的ZnCuInS/ZnSe/ZnS量子点进行了温度依赖的光致发光光谱的测量，当温度为15～90℃时，该量子点发射峰值波长随温度的升高而红移，发光强度随温度的升高而降低，说明Zn-CuInS/ZnSe/ZnS量子点是以导带能级与缺陷能级之间跃迁为主的复合发光。
ZnCuInS/ZnSe/ZnS양자점시일충무독，무중금속적“록색”반도체납미재료。재연구중，제비료삼충척촌적ZnCuInS/ZnSe/ZnS핵각양자점，기직경분별위3.3，2.7，2.3 nm。통과측량불동척촌적ZnCuInS/ZnSe/ZnS양자점적광치발광광보，기발사봉치파장수척촌적감소이람이。기흡수봉치파장화발사봉치파장분별시510，611（3.3 nm），483，583（2.7 nm）이급447，545 nm（2.3 nm）。ZnCuInS/ZnSe/ZnS양자점구유현저적척촌의뢰효응。ZnCuInS/ZnSe/ZnS양자점적사탁극사위이분별위398 meV （3.3 nm ），436 meV （2.7 nm）이급498 meV（2.3 nm），저양대적사탁극사위이증명，ZnCuInS/ZnSe/ZnS양자점적발광궤제여결함능급유관。동시，대직경위3.3 nm적ZnCuInS/ZnSe/ZnS양자점진행료온도의뢰적광치발광광보적측량，당온도위15～90℃시，해양자점발사봉치파장수온도적승고이홍이，발광강도수온도적승고이강저，설명Zn-CuInS/ZnSe/ZnS양자점시이도대능급여결함능급지간약천위주적복합발광。
ZnCuInS/ZnSe/ZnS quantum dots were non-toxic and heavy-metal free semiconductor nanocrystals .In the present pa-per ,ZnCuInS/ZnSe/ZnS core/shell/shell quantum dots were prepared with the particle size of 3.3 ,2.7 and 2.3 nm .The photo-luminescence of ZnCuInS/ZnSe/ZnS quantum dots with different size were measured ,and the wavelength of peak was blue-shif-ted with decreasing the diameter .The wavelength of absorption peaks and photoluminescence peaks were 510 nm ,611 nm (3.3 nm) ,483 nm ,583 nm (2.7 nm) and 447 nm and 545 nm(2.3 nm) .The obvious size-dependence of ZnCuInS/ZnSe/ZnS quan-tum dots was shown .The Stokes shifts of ZnCuInS/ZnSe/ZnS quantum dots were 398 meV (3.3 nm) ,436 meV (2.7 nm) and 498 meV (2.3 nm) .Such large Stokes shifts indicate that the emission should be ascribed to the defect-related recombination . The temperature-dependent photoluminescence of ZnCuInS/ZnSe/ZnS quantum dots with the particle size of 3.3 nm were meas-ured .The wavelength of peaks was red-shifted with increasing temperature and the intensity of photoluminescence spectra was decreased with increasing temperature .Therefore ,the emission was concluded to be the transition from the conduction band to defect state .