CAJ | 학술논문

随着微电子技术的飞速发展，半导体器件的截止频率已经进入到太赫兹频段，太赫兹电路的频率特性特性得到极大发展。以固态器件为基础的电路的工作频率进入到太赫兹频段。太赫兹固态电子器件与电路技术在空间领域有着重要的应用前景。文章重点介绍InP基三端太赫兹固态电子器件和电路，以及太赫兹肖特基二极管器件和电路的技术发展过程与最新动态。并指出随着器件与电路的整体化与集成化发展趋势，太赫兹单片集成技术是其未来发展方向。
수착미전자기술적비속발전，반도체기건적절지빈솔이경진입도태혁자빈단，태혁자전로적빈솔특성특성득도겁대발전。이고태기건위기출적전로적공작빈솔진입도태혁자빈단。태혁자고태전자기건여전로기술재공간영역유착중요적응용전경。문장중점개소InP기삼단태혁자고태전자기건화전로，이급태혁자초특기이겁관기건화전로적기술발전과정여최신동태。병지출수착기건여전로적정체화여집성화발전추세，태혁자단편집성기술시기미래발전방향。
The fast development of microelectronics makes the cutoff frequency of semiconductor devices exceed tera-hertz,which significantly improves the frequency of terahertz circuits. The solid-state electronic circuits entrance terahertz frequency. Solid State Terahertz Devices and Circuits are believed to be one of the most important promising technologies in space applications. The development of InP-based three-terminal terahertz solid state electronic devices and schottky barrier diodes,as well as the related circuits are reviewed. And it is pointed that terahertz monolithic integrated circuits (TMIC)is the most possible solution for the future development of this technology.