CAJ | 학술논문

针对n-on-p型长波Hg1-xCdxTe红外探测器的暗电流进行建模分析，分析了不同机制对暗电流的影响，仿真分析结果和实际结果能够较好地匹配。得出探测器的工作状态暗电流Idark＝9×10-10 A，工作电阻Rr＝109?，品质因子R0A＝20?cm2。从仿真分析结果得出，在现有工艺下，Shockley-Read-Hall （SRH）复合和表面漏电是影响暗电流的最主要的非本征因素，其中SRH复合速率为2×1016/s?cm3，当表面态到达1×1012 cm-2，器件会出现严重的表面沟道。
침대n-on-p형장파Hg1-xCdxTe홍외탐측기적암전류진행건모분석，분석료불동궤제대암전류적영향，방진분석결과화실제결과능구교호지필배。득출탐측기적공작상태암전류Idark＝9×10-10 A，공작전조Rr＝109?，품질인자R0A＝20?cm2。종방진분석결과득출，재현유공예하，Shockley-Read-Hall （SRH）복합화표면루전시영향암전류적최주요적비본정인소，기중SRH복합속솔위2×1016/s?cm3，당표면태도체1×1012 cm-2，기건회출현엄중적표면구도。
The dark current of n-on-p type LWIR based on Hg1-xCdxTe has been simulated in this paper. Different mechanisms influences dark current are also analyzed. The results of the simulation match well with the experiments. The photodetector has a dark current Idark=9×1010 A,working resistance Rr=109?, and quality factors R0A=20?cm2. According to the results,with the present technique,Shockley-Read-Hall (SRH) recombination and surface leakage current are the most influential extrinsic factors to the dark current. The recombination rate of SRH can be as high as 2×1016/s?cm3. And the device will have a severe surface channel when the surface states reaches 1×1012 cm-2.