红外与激光工程
紅外與激光工程
홍외여격광공정
INFRARED AND LASER ENGINEERING
2014年
1期
151-154
,共4页
王新%孙瑶%李野%端木庆铎
王新%孫瑤%李野%耑木慶鐸
왕신%손요%리야%단목경탁
ZnO薄膜%微光像增强器%光电阴极%防离子反馈膜%打拿极
ZnO薄膜%微光像增彊器%光電陰極%防離子反饋膜%打拿極
ZnO박막%미광상증강기%광전음겁%방리자반궤막%타나겁
ZnO thin film%low-light-level image intensifier%photocathode%ion barrier film%dynote
ZnO薄膜是一种新型的宽带隙透明氧化物薄膜材料，具有优良的物理和化学特性。在微光像增强器中具有多方面的潜在应用。通过对ZnO材料晶格参数等的研究，发现可以作为制备高质量GaN紫外光电阴极的缓冲层。通过对ZnO能带的研究，发现ZnO本身还可以独立的作为负电子亲和势光电阴极材料，一旦p型ZnO制备获得成功，将更有利于形成负电子亲和势光电阴极。此外，采用蒙特卡罗模拟的方法发现ZnO薄膜比传统的Al2O3防离子反馈膜对碳等正离子具有更强的阻挡作用，有可能取代Al2O3薄膜用于制备三代微光器件防离子反馈膜。 ZnO薄膜还具有较高的二次电子发射系数和适合的电阻率，可以用来制备Si微通道板打拿极。
ZnO薄膜是一種新型的寬帶隙透明氧化物薄膜材料，具有優良的物理和化學特性。在微光像增彊器中具有多方麵的潛在應用。通過對ZnO材料晶格參數等的研究，髮現可以作為製備高質量GaN紫外光電陰極的緩遲層。通過對ZnO能帶的研究，髮現ZnO本身還可以獨立的作為負電子親和勢光電陰極材料，一旦p型ZnO製備穫得成功，將更有利于形成負電子親和勢光電陰極。此外，採用矇特卡囉模擬的方法髮現ZnO薄膜比傳統的Al2O3防離子反饋膜對碳等正離子具有更彊的阻擋作用，有可能取代Al2O3薄膜用于製備三代微光器件防離子反饋膜。 ZnO薄膜還具有較高的二次電子髮射繫數和適閤的電阻率，可以用來製備Si微通道闆打拿極。
ZnO박막시일충신형적관대극투명양화물박막재료，구유우량적물리화화학특성。재미광상증강기중구유다방면적잠재응용。통과대ZnO재료정격삼수등적연구，발현가이작위제비고질량GaN자외광전음겁적완충층。통과대ZnO능대적연구，발현ZnO본신환가이독립적작위부전자친화세광전음겁재료，일단p형ZnO제비획득성공，장경유리우형성부전자친화세광전음겁。차외，채용몽특잡라모의적방법발현ZnO박막비전통적Al2O3방리자반궤막대탄등정리자구유경강적조당작용，유가능취대Al2O3박막용우제비삼대미광기건방리자반궤막。 ZnO박막환구유교고적이차전자발사계수화괄합적전조솔，가이용래제비Si미통도판타나겁。
ZnO thin film is a new type of wide bandgap oxide semiconductors, it has excellent physical and chemical properties. It has potential applications in the low-light-level image intensifier. It was found that ZnO thin film can be used as the buffer layer to fabricate GaN UV photocathode with high performance by the investigation on the lattice parameter of ZnO material. It was indicated that ZnO thin film could be used as the negative-affinity (NEA) photocathode itself. Once the p-type ZnO obtained, it was more benefit for the formation of NEA photocathode. Furthermore, according to the Monte Carlo simulation results, it was shown that the stopping ability of ZnO thin film on positive ions was stronger than that of traditional Al2O3 ion barrier film. So ZnO thin film can substitute for Al2O3 thin films and be used as the ion barrier film in the third generation low-light-level image intensifier. It is also found that ZnO can be used as the dynode due to its high secondary electron emission and suitable resistivity.
