CAJ | 학술논문

硅基APD的性能取决于其器件结构与工艺过程。文中对n+-p-π-p+外延结构的APD器件的工艺和器件性能进行了仿真分析，为硅基APD器件的设计提供了理论指导。利用Silvaco软件对APD器件的关键工艺离子注入和扩散工艺进行了仿真，确定工艺参数对杂质的掺杂深度和掺杂分布的影响。并且，对于APD器件的性能进行了分析，对电场分布、增益、量子效率、响应度等参数进行了仿真分析。仿真结果表明：在给定的器件参数条件下，所设计的APD器件的增益为100时，响应度峰值为55 A/W左右，在600~900 nm范围内具有较高响应度，峰值波长在810 nm。
규기APD적성능취결우기기건결구여공예과정。문중대n+-p-π-p+외연결구적APD기건적공예화기건성능진행료방진분석，위규기APD기건적설계제공료이론지도。이용Silvaco연건대APD기건적관건공예리자주입화확산공예진행료방진，학정공예삼수대잡질적참잡심도화참잡분포적영향。병차，대우APD기건적성능진행료분석，대전장분포、증익、양자효솔、향응도등삼수진행료방진분석。방진결과표명：재급정적기건삼수조건하，소설계적APD기건적증익위100시，향응도봉치위55 A/W좌우，재600~900 nm범위내구유교고향응도，봉치파장재810 nm。
The silicon APD performance is dependent on its device structure and processes. In this paper, the device performance and key processes for epi-planar n+-p-π-p+ structure silicon APD were simulated with Silvaco, in order to guide the silicon APD device design. The parameters of device processes such as ion implantation and dopant diffusion were simulated to get the impurity distribution and doping depth. Furthermore, the key parameters which were used to characterize the APD performance, such as the electric field distribution, the dark current and photocurrent, the gain, the quantum efficiency and the responsibility of the APD were simulated. The experiment results show that the maximum responsibility is up to 55 A/W when the gain is 100. The device is most sensitive in the spectral range of 600 nm to 900 nm. The peak responsivity of the device is 810 nm.