CAJ | 학술논문

文章采用介电常数低的纳米SiO2粉体与SiC微粉通过机械球磨的方式进行混合，制得SiO2包覆SiC的复合粉体，经干压成型，在流动的高纯氩气保护下，常压烧结出结构均匀、介电性能良好的SiC/SiO2复合材料。通过EDS、XRD、SEM等手段进行表征，分析了原料配比、烧结温度、密度及显微结构等对材料介电性能的影响。结果表明：烧结温度低于1000℃时，随着温度升高，材料的烧结密度降低，介电常数降低；温度高于1000℃时，材料的密度和介电常数随温度升高而增加，介电损耗则随温度升高一直呈递减趋势；当烧结温度为1100℃时，SiC与SiO2质量比为2∶1的试样获得了烧结密度为1.77 g/cm3、介电常数为5.40和介电损耗为0.055的较好性能。
문장채용개전상수저적납미SiO2분체여SiC미분통과궤계구마적방식진행혼합，제득SiO2포복SiC적복합분체，경간압성형，재류동적고순아기보호하，상압소결출결구균균、개전성능량호적SiC/SiO2복합재료。통과EDS、XRD、SEM등수단진행표정，분석료원료배비、소결온도、밀도급현미결구등대재료개전성능적영향。결과표명：소결온도저우1000℃시，수착온도승고，재료적소결밀도강저，개전상수강저；온도고우1000℃시，재료적밀도화개전상수수온도승고이증가，개전손모칙수온도승고일직정체감추세；당소결온도위1100℃시，SiC여SiO2질량비위2∶1적시양획득료소결밀도위1.77 g/cm3、개전상수위5.40화개전손모위0.055적교호성능。
Using low dielectric constant silica nano-powder and SiC powder as raw materials ,SiO2-coa-ted SiC composite powders were produced by mechanical milling .After dry pressing and pressureless sintering in Ar atmosphere ,SiC/SiO2 composites were made which show a homogeneous microstruc-ture and good dielectric properties .The composites were characterized by EDS ,XRD and SEM meth-ods .T he effects of mass ratio of raw materials ,sintering temperature ,density and microstructure on the dielectric properties of the composites were analyzed .The results showed that the density and die-lectric constant of the composites decreased with the increase of sintering temperature under 1 000 ℃ . When the sintering temperature was above 1 000 ℃ ,the density and dielectric constant increased gradually .With the increasing temperature ,the dielectric loss value decreased continually .The com-posite with combined good properties was obtained when the SiC/SiO2 mass ratio was 2∶1 and the sintering temperature was 1 100 ℃ .The achieved sintering density was 1.77 g/cm3 ,the dielectric con-stant was 5.4 and the dielectric loss was 0.055 .