CAJ | 학술논문

研究了氢等离子体钝化多晶硅(poly-Si)薄膜中缺陷态的详细物理机制。结果表明，多晶硅中不同的缺陷态需要不同的氢等离子体基团予以钝化。 Hα具有较低的能量，主要钝化悬挂键类缺陷态；H*具有较高的能量，对钝化晶界附近与镍杂质相关的缺陷态更有效；Hβ和 Hγ具有的能量最高，可以用来钝化晶粒内部的缺陷态。这些分析和结果有利于优化 H等离子体钝化多晶硅的条件，进一步提高多晶硅性能。
연구료경등리자체둔화다정규(poly-Si)박막중결함태적상세물리궤제。결과표명，다정규중불동적결함태수요불동적경등리자체기단여이둔화。 Hα구유교저적능량，주요둔화현괘건류결함태；H*구유교고적능량，대둔화정계부근여얼잡질상관적결함태경유효；Hβ화 Hγ구유적능량최고，가이용래둔화정립내부적결함태。저사분석화결과유리우우화 H등리자체둔화다정규적조건，진일보제고다정규성능。
The mechanism of hydrogen plasma passivation for poly-Si thin films has been investigated.It has been found that different kind of hydrogen plasma radical was responsible for different defects passivation for poly-Si. The Hαwith low energy was mainly responsible for passivating the dangling-bond defects.The H* with higher energy may passivate the defects related to Ni impurity around the grain boundaries more effectively.In addi-tion,the Hβand Hγwith the highest energy are required to passivate intra-grain defects.These analysis and re-sults are very usable to optimize the H plasma passivation and make the passivation more effective.