CAJ | 학술논문

采用MOCVD方法在AlN/蓝宝石模板生长了与GaN近晶格匹配的高质量 InAlN薄膜，并对其结构及表面特性进行了研究。结果表明：X射线衍射（20-24）面的倒易空间图表明，InAlN薄膜的晶格常数与GaN面的相匹配；（002）和（102）面的ω摇摆曲线测试表明，InAlN薄膜的晶体质量高，半峰宽值分别低达100″和248″；通过扫描电子显微镜（SEM ）分析发现，InAlN薄膜表面平整，仅存在少量位错坑；X射线能谱面扫描图（EDX映射）结果显示，除位错坑附近外，在薄膜其它区域内 Al和In元素分布均匀。
채용MOCVD방법재AlN/람보석모판생장료여GaN근정격필배적고질량 InAlN박막，병대기결구급표면특성진행료연구。결과표명：X사선연사（20-24）면적도역공간도표명，InAlN박막적정격상수여GaN면적상필배；（002）화（102）면적ω요파곡선측시표명，InAlN박막적정체질량고，반봉관치분별저체100″화248″；통과소묘전자현미경（SEM ）분석발현，InAlN박막표면평정，부존재소량위착갱；X사선능보면소묘도（EDX영사）결과현시，제위착갱부근외，재박막기타구역내 Al화In원소분포균균。
High-quality InAlN near lattice-matched (LM ) to GaN has been grow n on AlN/sapphire tem-plates by metalorganic chemical vapor deposition (M OCVD ) , and characterized by X-ray diffraction (XRD) ,energy dispersive X-ray spectroscopy (EDX ) and scanning electron microscope (SEM ) .Results show that InAlN is lattice matched to GaN indicated by XRD mapping measurements (20-24) ,,and ω-scan-ning rocking curve measurements indicate the high quality of InAlN with the full width at half maximums (FWHMs) of (002) and (102) being as low as 100 and 248 arcsec ,respectively .SEM mappings of InAlN surface show some V-pits distribution .EDX measurements indicate homogeneously special distribution of Al and In .