CAJ | 학술논문

建立了 CP4研抛晶片时,晶片上任一点相对于研抛盘的运动方程。通过对其运动轨迹的分析,建立了工件材料研抛非均匀系数的函数模型和相对研抛材料去除速率的函数模型。运用 Matlab 软件,模拟分析了各个参数变化对研抛非均匀系数和相对研抛效率的影响。结果表明：对材料去除效率影响最大的参数是偏心距 e 的大小,其次是从动系数λ1；对晶片非均匀性影响最大参数是从动系数λ1,其次是偏心距 e ；当λ1=1,λ2>0.3,e 取工艺允许的最大值时,工件研抛的均匀性最好。
건립료 CP4연포정편시,정편상임일점상대우연포반적운동방정。통과대기운동궤적적분석,건립료공건재료연포비균균계수적함수모형화상대연포재료거제속솔적함수모형。운용 Matlab 연건,모의분석료각개삼수변화대연포비균균계수화상대연포효솔적영향。결과표명：대재료거제효솔영향최대적삼수시편심거 e 적대소,기차시종동계수λ1；대정편비균균성영향최대삼수시종동계수λ1,기차시편심거 e ；당λ1=1,λ2>0.3,e 취공예윤허적최대치시,공건연포적균균성최호。
The motion equation of a point on wafer against the polishing pad when using CP4 to polish wafer was established.The functions of material removal non-uniform coefficient(MRNUC)and relative material removal rate were obtained by analyzing its trajectory.The effect of machining parameters on MRNUC and relative MRR was studied by using MATLAB .Results indicated that the most important factor affecting MRUNC was the eccentric distance e ,followed by the driven coefficientλ1 ,while the most important factor affecting MRNUC was the driven coefficientλ1 ,followed by the eccentric distance e .The wafer polishing MRNUC minimized whenλ1 = 1,λ2 >0.3 and e being the allowed maximum value.