CAJ | 학술논문

半导体激光器在各领域的广泛应用要求其输出功率不断提高，使得多芯片集成封装大功率半导体激光器的发展成为主流之一。针对典型的12只芯片以阶梯形式封装的百瓦级激光器，利用ANSYS软件进行了稳态热分析，模拟得出芯片有源区温度及其热耦合温升与热沉结构尺寸变化的关系曲线，分析了该激光器热特性，进而提出一种使芯片散热较好的热沉结构。
반도체격광기재각영역적엄범응용요구기수출공솔불단제고，사득다심편집성봉장대공솔반도체격광기적발전성위주류지일。침대전형적12지심편이계제형식봉장적백와급격광기，이용ANSYS연건진행료은태열분석，모의득출심편유원구온도급기열우합온승여열침결구척촌변화적관계곡선，분석료해격광기열특성，진이제출일충사심편산열교호적열침결구。
The semiconductor lasers are widely used in various fields, this requires that their output power is increasingly improved, so the development of high power semiconductor laser with multichip-packaging is one of mainstream. A typical hundred-watt semiconductor laser packaged with 12 chips in ladder form was analyzed in thermal steady-state, obtaining the rule curves of the temperature of active region of chip and temperature rise by thermal coupling in different parameters of heat sink, and a heat sink structure with better heat dissipation was put forward.