红外与激光工程
紅外與激光工程
홍외여격광공정
INFRARED AND LASER ENGINEERING
2014年
5期
1359-1363
,共5页
王雯%张小雷%吕衍秋%司俊杰
王雯%張小雷%呂衍鞦%司俊傑
왕문%장소뢰%려연추%사준걸
InSb%红外焦平面%金刚石点切削%Si绑定
InSb%紅外焦平麵%金剛石點切削%Si綁定
InSb%홍외초평면%금강석점절삭%Si방정
InSb%infrared focal plane%point cutting of diamond%silicon banding
针对InSb红外焦平面芯片中InSb与Si读出电路热膨胀系数不匹配导致芯片龟裂及铟柱断裂现象，开展了Si基InSb红外焦平面探测器(FPA)的研究。运用磨抛减薄技术及金刚石点切削技术对芯片背面进行精确减薄，得到厚度为15μm的InSb芯片；研究了在InSb芯片和Si片上溅射及蒸发减反膜工艺，得到InSb芯片和Si片粘贴后红外中短波光谱的透过率高达88豫；对器件的整体工艺路线进行了探索，最终制备出Si基128×128元InSb红外焦平面探测器器件，测试结果表明：器件探测率、响应率及串音等性能指标达到传统工艺制备的器件性能指标；经温冲试验后测试器件结构保持完好，性能未发生变化，证明该工艺路线可解决芯片受应力冲击而产生的铟柱断裂及芯片龟裂的现象，可有效提高InSb焦平面探测器芯片的成品率。
針對InSb紅外焦平麵芯片中InSb與Si讀齣電路熱膨脹繫數不匹配導緻芯片龜裂及銦柱斷裂現象，開展瞭Si基InSb紅外焦平麵探測器(FPA)的研究。運用磨拋減薄技術及金剛石點切削技術對芯片揹麵進行精確減薄，得到厚度為15μm的InSb芯片；研究瞭在InSb芯片和Si片上濺射及蒸髮減反膜工藝，得到InSb芯片和Si片粘貼後紅外中短波光譜的透過率高達88豫；對器件的整體工藝路線進行瞭探索，最終製備齣Si基128×128元InSb紅外焦平麵探測器器件，測試結果錶明：器件探測率、響應率及串音等性能指標達到傳統工藝製備的器件性能指標；經溫遲試驗後測試器件結構保持完好，性能未髮生變化，證明該工藝路線可解決芯片受應力遲擊而產生的銦柱斷裂及芯片龜裂的現象，可有效提高InSb焦平麵探測器芯片的成品率。
침대InSb홍외초평면심편중InSb여Si독출전로열팽창계수불필배도치심편구렬급인주단렬현상，개전료Si기InSb홍외초평면탐측기(FPA)적연구。운용마포감박기술급금강석점절삭기술대심편배면진행정학감박，득도후도위15μm적InSb심편；연구료재InSb심편화Si편상천사급증발감반막공예，득도InSb심편화Si편점첩후홍외중단파광보적투과솔고체88예；대기건적정체공예로선진행료탐색，최종제비출Si기128×128원InSb홍외초평면탐측기기건，측시결과표명：기건탐측솔、향응솔급천음등성능지표체도전통공예제비적기건성능지표；경온충시험후측시기건결구보지완호，성능미발생변화，증명해공예로선가해결심편수응력충격이산생적인주단렬급심편구렬적현상，가유효제고InSb초평면탐측기심편적성품솔。
The thermal expansion coefficient mismatch between InSb chips and silicon readout circuits was one of the prime reasons for cracking and indium column chip breakage, which carried out research InSb infrared Focal Plane Arrays (FPA) detectors banding on Si wafer. It used the technology of grinding, polishing thinning and the point cutting of diamond to cutting precisely on the backside of the chips, which on the purpose to have chips with a thickness of 15 μm. The transmittance of infrared spectral obtained was higher than 88% in medium- short wavelength. The result shows that most of the important performance such as detectivity and responsivity of FPA under the bonding technique are equal to traditional structure FPA. Furthermore, the performance of these FPA doesn’t degress after temperature shock experiment, which proves that the Si- bonding technology can solve the problem brought out by indium columns breakage of impact stresses, which plays a dominant role in the yield of InSb infrared focal plane arrays detectors.
