CAJ | 학술논문

InGaAs器件具有光谱响应宽、量子效率高、响应速度快、数字化读出、高温工作、可靠性好以及寿命长等优点，符合新一代微光器件的发展需求，在国际上成为固体微光器件的一种新选择，获得了重要的发展和应用。文章就 InGaAs 固体微光器件材料属性、器件性能以及成像特点等几方面进行了详细分析，介绍了当前InGaAs器件的发展趋势，以及研制320×256 InGaAs阵列的最新进展。研究结果表明 InGaAs 材料生长及器件工艺具有较好的可控性和稳定性，为实现高性能、实用化的InGaAs固体微光器件提供了技术支撑。
InGaAs기건구유광보향응관、양자효솔고、향응속도쾌、수자화독출、고온공작、가고성호이급수명장등우점，부합신일대미광기건적발전수구，재국제상성위고체미광기건적일충신선택，획득료중요적발전화응용。문장취 InGaAs 고체미광기건재료속성、기건성능이급성상특점등궤방면진행료상세분석，개소료당전InGaAs기건적발전추세，이급연제320×256 InGaAs진렬적최신진전。연구결과표명 InGaAs 재료생장급기건공예구유교호적가공성화은정성，위실현고성능、실용화적InGaAs고체미광기건제공료기술지탱。
InGaAs devices has been chosen as new candidate of solid-state low-light devices because of advantages such as wide response wavelength, high quantum efficiency, high device performance, digitalized readout, high temperature operation, high reliability and long lifetime etc., it has gained vital development and application in the world. The InGaAs material properties, devices performance and imagery characterization was analyzed in detail, InGaAs devices development trend was introduced, the new advancement of 320×256 InGaAs arrays was depicted. The results of study showed both material growth and devices fabrication technology of InGaAs devices were easy to control and have excellent stability, providing technical support for realizing high performance and practical devices.