功能材料
功能材料
공능재료
JOURNAL OF FUNCTIONAL MATERIALS
2014年
4期
4108-4111
,共4页
牛微%毕孝国%王刚%孙旭东
牛微%畢孝國%王剛%孫旭東
우미%필효국%왕강%손욱동
电致变色%TiO2薄膜%循环伏安%稀土掺杂
電緻變色%TiO2薄膜%循環伏安%稀土摻雜
전치변색%TiO2박막%순배복안%희토참잡
electrochromism%TiO2 thin film%cyclic voltammetry%rare earth doping
以钛酸四丁酯和硝酸钐为主要原料,采用溶胶-凝胶法制备了 Sm 掺杂 TiO2薄膜。Sm 掺杂的摩尔分数分别为0,2%,5%,10%和20%。采用XRD和TG-DTA表征了薄膜的结构和热重特性,使用电化学工作站和紫外-可见分光光度计研究了薄膜的电致变色性能。结果表明,Sm掺杂使得 TiO2薄膜具有更高的无定形程度。250℃热处理的 Sm 掺杂 TiO2薄膜具有较高的电荷存储能力和循环可逆性。Sm 掺杂量为5%时,薄膜的峰值电流最大,电荷存储能力最强,注入电荷密度为13.35 mC/cm2,循环可逆性 K 值为0.92。Sm掺杂 TiO2薄膜在可见光范围内具有较好的光学透明度,透光率在70%~80%。适于用作电致变色器件的离子存储层。
以鈦痠四丁酯和硝痠釤為主要原料,採用溶膠-凝膠法製備瞭 Sm 摻雜 TiO2薄膜。Sm 摻雜的摩爾分數分彆為0,2%,5%,10%和20%。採用XRD和TG-DTA錶徵瞭薄膜的結構和熱重特性,使用電化學工作站和紫外-可見分光光度計研究瞭薄膜的電緻變色性能。結果錶明,Sm摻雜使得 TiO2薄膜具有更高的無定形程度。250℃熱處理的 Sm 摻雜 TiO2薄膜具有較高的電荷存儲能力和循環可逆性。Sm 摻雜量為5%時,薄膜的峰值電流最大,電荷存儲能力最彊,註入電荷密度為13.35 mC/cm2,循環可逆性 K 值為0.92。Sm摻雜 TiO2薄膜在可見光範圍內具有較好的光學透明度,透光率在70%~80%。適于用作電緻變色器件的離子存儲層。
이태산사정지화초산삼위주요원료,채용용효-응효법제비료 Sm 참잡 TiO2박막。Sm 참잡적마이분수분별위0,2%,5%,10%화20%。채용XRD화TG-DTA표정료박막적결구화열중특성,사용전화학공작참화자외-가견분광광도계연구료박막적전치변색성능。결과표명,Sm참잡사득 TiO2박막구유경고적무정형정도。250℃열처리적 Sm 참잡 TiO2박막구유교고적전하존저능력화순배가역성。Sm 참잡량위5%시,박막적봉치전류최대,전하존저능력최강,주입전하밀도위13.35 mC/cm2,순배가역성 K 치위0.92。Sm참잡 TiO2박막재가견광범위내구유교호적광학투명도,투광솔재70%~80%。괄우용작전치변색기건적리자존저층。
Sm doped TiO2 thin films were prepared by sol-gel methods with butyltitanate and samarium nitrate as main components.The Sm doping molar ratios are 0,2%,5%,10% and 20%.Structural,thermogravimet-ric and electrochemical properties were investigated by XRD,TG-DTA,cyclic voltammetry curves(CV)and ul-traviolet visible spectroscopy.The result indicates that the Sm doped TiO2 thin film has higher amorphous de-gree.When the heat processing temperature was at 250 ℃,Sm doped TiO2 thin film has good ion storage ca-pacity and cyclic reversibility.When the doped amount of Sm was at 5%,the peak current of thin film reaches its maximum value with most powerful charge storage capability,injected charge density at 13.35 mC/cm2 ,and cyclic reversibility K value at 0.92.Sm doped TiO2 thin film has good transparency in the visible light range and transmittance was 70%-80%.This would be used as ion storage material in electrochromic glass.