CAJ | 학술논문

在亚微米工艺中，多晶栅TiSi工艺是降低接触电阻的常用方法。但是TiSi的生长与衬底的掺杂浓度相关，对多晶栅的掺杂剂量有很高的要求。由于光刻工艺中存在的套刻偏差，使得后续源漏注入剂量会在多晶栅上有所偏差，影响了后续TiSi在多晶栅上的生长。文章采用多晶栅上生长一层LPCVD SiN作为掩蔽层的方法，避免了由于光刻套刻偏差引入的注入剂量偏差，改善了后续多晶栅上TiSi的生长。通过对As注入和P注入在不同SiN厚度掩蔽层下穿透率的研究发现40 nm左右基本可以阻挡95%的N+S/D As注入剂量而保留80%的多晶栅P注入剂量。该种掩蔽层方法有很多优点：源漏注入的条件不用更改；多晶栅注入的可调节剂量范围大大增加，可以更好地保持重掺杂多晶栅特性。
재아미미공예중，다정책TiSi공예시강저접촉전조적상용방법。단시TiSi적생장여츤저적참잡농도상관，대다정책적참잡제량유흔고적요구。유우광각공예중존재적투각편차，사득후속원루주입제량회재다정책상유소편차，영향료후속TiSi재다정책상적생장。문장채용다정책상생장일층LPCVD SiN작위엄폐층적방법，피면료유우광각투각편차인입적주입제량편차，개선료후속다정책상TiSi적생장。통과대As주입화P주입재불동SiN후도엄폐층하천투솔적연구발현40 nm좌우기본가이조당95%적N+S/D As주입제량이보류80%적다정책P주입제량。해충엄폐층방법유흔다우점：원루주입적조건불용경개；다정책주입적가조절제량범위대대증가，가이경호지보지중참잡다정책특성。
The polysilicon-gate titanium silicide process has been used more and more universally in submicron manufacturing process. But TiSi growth has correlation with doping of substrate. Poor overlay precision caused the polysilicon-gate implant dose out of control during source/drain implant process. The abnormal of implant dose of polysilicon-gate will affect the growth of TiSi on polysilicon-gate, and cause the resistance of TiSi increases. This paper proposed a method to improve the TiSi resistance on submicron polysilicon-gate. Though growing a SiN barrier layer on polysilicon-gate, effectively reduce the abnormal of implant dose, and then guarantee the stability of TiSi growth on polysilicon-gate and resistance. Using this SiN barrier layer can hold up 95% as dose and hold 80%P dose. This SiN barrier layer has a lot of advantages: such as keep source/drain implant condition stability;increase the adjustment region of polysilicon-gate implant dose and keep the characteristic of the doped polysilicon-gate.