CAJ | 학술논문

采用应变InGaAs覆盖层可以实现GaAs基量子点1.3μm，但是1.55μm GaAs基量子点的制备难度要大得多，需要高In含量的覆盖层和较大的量子点。但是高In量子点容易引起快速降解的非辐射复合中心，影响QD材料的晶体和光学特性。较为系统的研究了长波长多层InAs量子点的MBE生长，优化了生长条件，获得了波长约为1568nm的多层InAs量子点材料。
채용응변InGaAs복개층가이실현GaAs기양자점1.3μm，단시1.55μm GaAs기양자점적제비난도요대득다，수요고In함량적복개층화교대적양자점。단시고In양자점용역인기쾌속강해적비복사복합중심，영향QD재료적정체화광학특성。교위계통적연구료장파장다층InAs양자점적MBE생장，우화료생장조건，획득료파장약위1568nm적다층InAs양자점재료。
Compared to the development of 1.3 mm GaAs based quantum dots (QDs),the shift to 1.55 mm poses sig-nificant challenges. Following the introduction of a strained InGaAs cap layer to reach 1.3 mm, pushing the technology to 1.55 mm devices would logically merely require even higher indium content QD capping layers and larger QDs. However,concentration in the QDs and the surrounding matrix very readily induces non-radiative recombination centres which rapidly degrade the crystal and optical quality of the QDs. In this paper had systematic studied on the MBE growth InAs QDs , optimization of the growth conditions , and1568nm long-wavelength InAs QDs material were obtained.