CAJ | 학술논문

TiO2是作为一种宽禁带半导体材料可作为紫外器件，但因其间接带隙结构、禁带宽度仅为3.0eV等特点，严重影响其应用范围。本文利用共溅射技术，通过Zn掺杂，在K9玻璃基底上制备了Ti-Zn-O复合薄膜，并研究了Zn溅射功率对其结构及光学性质的影响。结果显示：所制备的薄膜为ZnTiO3和不饱和TiO2的复合结构，随着Zn粒子的溅射能量增加，晶粒尺寸和表面粗糙度增加，并可将薄膜本征吸收边蓝移至3.61eV。
TiO2시작위일충관금대반도체재료가작위자외기건，단인기간접대극결구、금대관도부위3.0eV등특점，엄중영향기응용범위。본문이용공천사기술，통과Zn참잡，재K9파리기저상제비료Ti-Zn-O복합박막，병연구료Zn천사공솔대기결구급광학성질적영향。결과현시：소제비적박막위ZnTiO3화불포화TiO2적복합결구，수착Zn입자적천사능량증가，정립척촌화표면조조도증가，병가장박막본정흡수변람이지3.61eV。
TiO2 can be used as UV device because it is a wide band gap semiconductor material,however,because of the indirect band gap structure;the band gap is only 3.0eV, etc., seriously affecting its scope of application. In this paper, Ti-Zn-O composite film was prepared on K9 glass substrate by sputtering technique, and the effects of Zn sputtering power of its structure and optical properties were researched. The results showed that the prepared films were ZnTiO3 and unsaturated TiO2 composite structure, with the increase of Zn sputtering energy, the crystallite size and the surface roughness were both increased,and the intrinsic absorption edge of the films was blue shifted to 3.61eV.