CAJ | 학술논문

采用磁控溅射技术在单晶硅衬底上制备了稀土(Ce，Yb)共掺杂氧化硅薄膜，研究了薄膜样品的结构和下转换发光性质。样品的发光光谱显示，在He-Cd激光器325 nm线的激发下，Ce3+离子的发光强度较弱而Yb3+离子的发光较强；Yb3+的发光随着退火温度的升高逐渐增强；这些结果加上样品的激发光谱和衰变光谱，都显示样品中发生了Ce3+到Yb3+的能量传递过程。 X射线衍射结果表明，样品在高温退火时(大于1000℃)出现晶化，形成了Ce和Yb的硅酸盐结构。笔者认为利用高温退火形成Ce的硅酸盐结构可以明显增强Yb3+的发光，从而提高薄膜的下转换发光效率。
채용자공천사기술재단정규츤저상제비료희토(Ce，Yb)공참잡양화규박막，연구료박막양품적결구화하전환발광성질。양품적발광광보현시，재He-Cd격광기325 nm선적격발하，Ce3+리자적발광강도교약이Yb3+리자적발광교강；Yb3+적발광수착퇴화온도적승고축점증강；저사결과가상양품적격발광보화쇠변광보，도현시양품중발생료Ce3+도Yb3+적능량전체과정。 X사선연사결과표명，양품재고온퇴화시(대우1000℃)출현정화，형성료Ce화Yb적규산염결구。필자인위이용고온퇴화형성Ce적규산염결구가이명현증강Yb3+적발광，종이제고박막적하전환발광효솔。
Cerium (Ce) and ytterbium (Yb) co-doped silicon oxide (SiOx: Ce, Yb) thin films were deposited by using magnetron co-sputtering technique. The down-conversion photoluminescence (PL) properties and structural evolution of the films after thermal treatments were studied. Under the excitation of a He-Cd 325 line, light emissions from the Ce3+ ions are rather weak while quite strong from the Yb3+ions; the Yb PL intensity increases with elevating the anneal temperature, and both PL excitation and decay spectra indicate that energy transfer from Ce3+ to Yb3+ ions has taken place in the oxides. X-ray diffraction patterns show that Ce and Yb-related silicates have formed as the annealing temperature is higher than 1 000 ℃. The authors believe that the Yb PL can be enhanced greatly by forming high-luminescent Ce3+-related silicates in the oxide films, and thus increase the down-conversion efficiency.