CAJ | 학술논문

极化方向周期排列的GaAs通过准相位匹配方式能够实现高功率CO2激光器倍频，利用晶片键合技术对GaAs极化方向反转堆叠的制备工艺和键合性能进行研究，采用氢离子轰击的方法去除GaAs表面氧化物，提高光学性能，超高真空中预键合减少界面微气孔密度，退火处理增加键合力，实现了双层GaAs的可靠键合，两层 GaAs成为一块单晶结构的整体，利用键合技术获得了大通光孔径、低光学损耗的周期性结构GaAs晶体，为实现高功率CO2激光器倍频提供了途径。
겁화방향주기배렬적GaAs통과준상위필배방식능구실현고공솔CO2격광기배빈，이용정편건합기술대GaAs겁화방향반전퇴첩적제비공예화건합성능진행연구，채용경리자굉격적방법거제GaAs표면양화물，제고광학성능，초고진공중예건합감소계면미기공밀도，퇴화처리증가건합력，실현료쌍층GaAs적가고건합，량층 GaAs성위일괴단정결구적정체，이용건합기술획득료대통광공경、저광학손모적주기성결구GaAs정체，위실현고공솔CO2격광기배빈제공료도경。
A periodic structure of bonded GaAs wafers can be used for high power quasi-phase-matched second-harmonic generation of a CO2 laser . The fabrication of the QPM GaAs based on wafer bonding technology and interfacial properties of this crystal were studied . Hydrogen ion beam was used to remove the oxide layer on the GaAs surface to improve its optical properties . Pre-bonding process in the ultra-high vacuum reduced the microspores density of the bonding interface . Heat treatment increased the bonding force . Thus a reliable bond of the two-layer GaAs was realized . The two-layer GaAs combined into a single crystal structure without amorphous layer formed by oxide . By this bonding process a periodic polarization reversed GaAs crystal with large aperture , low loss was obtained , therefore providing a way for realizing high power frequency doubling of CO2 laser using quasi-phase-matching technology .